Transport boundary condition for semiconductor structures

Volovichev, I. N.; Pérez, Jesús Enrique Velázquez; Gurevich, Yu. G.

doi:10.1016/j.sse.2008.04.037

Cited by 28 publications

(10 citation statements)

References 20 publications

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“…The electrochemical potential4 may have discontinuities at the contacts x ¼ 0 and x ¼ l, as the boundary conditions for the electrochemical potentials on these contacts in presence of an electric current are the following [24,25]:…”

Section: Thermal Emf Generationmentioning

confidence: 99%

Mechanisms of the thermal electromotive force, heating and cooling in semiconductor structures

Titov¹,

Pérez²,

Gurevich³

2015

International Journal of Thermal Sciences

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Section: Thermal Emf Generationmentioning

confidence: 99%

Mechanisms of the thermal electromotive force, heating and cooling in semiconductor structures

Titov¹,

Pérez²,

Gurevich³

2015

International Journal of Thermal Sciences

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“…(1), one has to introduce boundary conditions 13,14 j p ðÀaÞ ¼ ÀqR s ðÀaÞ; j p ðaÞ ¼ qR s ðaÞ; j ¼ Àr s;l n ½uðÀaÞ À u m ðÀaÞ þ ðl m À l n þ de c Þ=q; j ¼ r s;r n ½uðaÞ À u m ðaÞ þ ðl m À l n þ de c Þ=q; u m ð0Þ ¼ 0; u m ðaÞ ¼ V:…”

Section: Model and Analytical Solutions For Cvcmentioning

confidence: 99%

Unusual nonlinear current-voltage characteristics of a metal-intrinsic semiconductor-metal barrierless structure

Meriuts

Gurevich

2015

Journal of Applied Physics

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“…The system of equations 50, 51, 68, and 63 defines the mathematical framework of thermoelectric cooling, and it must be complemented with the appropriate boundary conditions that describe the electric currents, the heat flux, and the electric potential through the interfaces (75)(76)(77). Let us assume that in the y-and z-direction the p-n junction is adiabatically isolated.…”

Section: Equations For Cooling and Heating In P-n Junctionsmentioning

confidence: 99%

“…72 and 75) cannot be rigorously defined (78). At the p-n junction interface, we can introduce the following additional boundary conditions (75,76):…”

Section: Equations For Cooling and Heating In P-n Junctionsmentioning

confidence: 99%

Peltier Effect in Semiconductors

Gurevich

Pérez

2014

Wiley Encyclopedia of Electrical and Electronics Engineering

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In recent years, devices based on the Peltier effect, which is the basis for solid‐state thermoelectric cooling, have evolved rapidly to meet the fast‐growing electronic industry. The Peltier effect corresponds to the heat extraction or absorption occurring at the contact between two different conducting media when a direct current (DC) electric current flows through this contact. A comprehensive study of the mechanisms of heating and cooling originated by an electrical current in semiconductor devices is reported. The thermoelectric cooling in n ‐ n , p ‐ p , and p ‐ n junction contacts, as well as inhomogeneous bulk semiconductors, are analyzed. Both degenerate and nondegenerate electron and hole gases are considered. The role of recombination and nonequilibrium charge carriers in the contact cooling (heating) effect is discussed. Along with the above, special attention is paid to several aspects of nonequilibrium thermodynamics of thermoelectric phenomena involved in Peltier effect in semiconductors that demand a careful examination. The formulation of an adequate self‐consistent theoretical model describing the Peltier effect is also presented.

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Transport boundary condition for semiconductor structures

Cited by 28 publications

References 20 publications

Mechanisms of the thermal electromotive force, heating and cooling in semiconductor structures

Mechanisms of the thermal electromotive force, heating and cooling in semiconductor structures

Unusual nonlinear current-voltage characteristics of a metal-intrinsic semiconductor-metal barrierless structure

Peltier Effect in Semiconductors

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