2014
DOI: 10.1021/nl4043399
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Transport Measurement of Landau Level Gaps in Bilayer Graphene with Layer Polarization Control

Abstract: Landau level (LL) gaps are important parameters for understanding electronic interactions and symmetry-broken processes in bilayer graphene (BLG). Here we present transport spectroscopy measurements of LL gaps in double-gated suspended BLG with high mobilities in the quantum Hall regime. By using bias as a spectroscopic tool, we measure the gap Δ for the quantum Hall (QH) state at filling factors ν = ±4 and -2. The single-particle Δ(ν=4) scales linearly with magnetic field B and is independent of the out-of-pl… Show more

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Cited by 17 publications
(24 citation statements)
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“…Phase I is only fully resolved at E > ¼ 0 and large B, and phase II is resolved at large E > and relatively small B. To further explore these two distinct n ¼ 2 QH states, we perform transport spectroscopy by using the source-drain bias V as a spectroscopic tool 35,40 . The details of this measurement technique and its application to QH states can be found in refs 36,40.…”
Section: Resultsmentioning
confidence: 99%
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“…Phase I is only fully resolved at E > ¼ 0 and large B, and phase II is resolved at large E > and relatively small B. To further explore these two distinct n ¼ 2 QH states, we perform transport spectroscopy by using the source-drain bias V as a spectroscopic tool 35,40 . The details of this measurement technique and its application to QH states can be found in refs 36,40.…”
Section: Resultsmentioning
confidence: 99%
“…To further explore these two distinct n ¼ 2 QH states, we perform transport spectroscopy by using the source-drain bias V as a spectroscopic tool 35,40 . The details of this measurement technique and its application to QH states can be found in refs 36,40. Briefly, at each conductance plateau, BLG's Fermi level is pinned between the highest filled and the next unfilled LLs.…”
Section: Resultsmentioning
confidence: 99%
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“…1(a). In The knowledge of E10 (D, B) sheds considerable light on the widely varying reports of the LL gap energies in the literature [15,18,22,[35][36][37]. In Fig.…”
mentioning
confidence: 98%
“…Here we fabricate dual-gated suspended [17][18][19] r-TLG devices 20 , where U > and n can be independently tuned. Device mobility ranges from 20,000 to 90,000 cm 2 V À 1 s À 1 .…”
mentioning
confidence: 99%