Transport of holes in uniformly and non-uniformly protonated poly(o-methoxyaniline)

Mergulhão, S.; Faria, Roberto Mendonça; Ferreira, G.F. Leal; Sworakowski, J.

doi:10.1016/s0009-2614(97)00302-3

Cited by 10 publications

(6 citation statements)

References 32 publications

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“…The parameter values are reasonably good, particularly those related to the carrier mobility. For a given V SD , the variation of the mobility μ is not bigger than a factor of two (since the obtained value for k is 0.5), and the adjusted value of μ 0 (∼10 −5 cm 2 /Vs) is in good agreement with that found in the literature by different experimental techniques 10, 18. The total amount of injected charge A is such that ρ 0 is enough to provide measurable I SD currents.…”

Section: Discussionsupporting

confidence: 84%

Device model for poly(o‐methoxyaniline) field‐effect transistor

Bianchi

Onmori

Faria

2004

J Polym Sci B Polym Phys

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We present a detailed study of the electric mechanism of a thin poly(omethoxyaniline) (POMA) field-effect transistor. The device was prepared using Al-Si/ SiO 2 /(interdigitated gold lines array)/POMA structure as the gate electrode, insulating layer, source-drain electrodes, and active layer, respectively. A model is presented for the electrical characteristics of such a device that encompasses the disordered properties of the POMA, the source-drain electrical-field dependence of hole mobility, and the carrier and mobility gradients in directions perpendicular to the polymer-oxide interface. The fittings of source-drain current versus source-drain voltage, having as parameters the gate voltage, is in good agreement with the experimental data, and the dependence of both the carrier saturation velocity and of the carrier mobility with the gate voltage are obtained. EXPERIMENTALThe device was prepared using a conventional metal-insulating-polymer structure. POMA was synthesized using a method described elsewhere, 3

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Section: Discussionsupporting

confidence: 84%

Device model for poly(o‐methoxyaniline) field‐effect transistor

Bianchi

Onmori

Faria

2004

J Polym Sci B Polym Phys

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“…In this paper, intercalation of poly o-methoxyaniline (POMA) into vanadium pentoxide matrix has been performed. POMA was chosen due to the presence of methoxy groups that increase the inter-chain separation and intra-chain disorder as well as POMA presents high solubility in common organic solvents improving its processability (13)(14)(15). In particular, our interest is to investigate the conductivity properties of the intercalation compounds resulting from the presence of POMA in the interlayer domain of the host structure.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Characterization, and Conductivity Studies of Poly-o-Methoxyaniline Intercalated into V2O5 Xerogel

Guerra¹,

Brunello

Graeff

et al. 2002

Journal of Solid State Chemistry

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“…This drop in conductivity is known as "negative photoconduction". This effect could be explained by the creation of "capturing" species of free carriers, or excitonic defects of the material when the active layer of the thin film is exposed to light, decreasing the mobility of the carriers 29 . These defects have a relatively long lifespan, in the order of tenths milliseconds, and some studies have already reported that excitonic centers with lifetime from minutes to hours 30,31 .…”

Section: Xylenementioning

confidence: 99%

Study of the Effect of Solvent on the Conductivity of Langmuir-Schaefer Films of Poly(Fullerene)s

et al. 2021

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The present work aims to prepare and characterize very thin films of poly(fullerene)s in order to investigate their electrical properties and the influence of xylene and chloroform solvents on these materials. The fullerenes studied were phenyl-C 61 -butyric acid methyl ester (PCBM), oligo{(phenyl-C 61 -butyric acid methyl ester)-alt-[1,4-bis(bromomethyl)-2,5-bis(octyloxy)benzene]} (OPCBMMB) and poly{[bispyrrolidino(phenyl-C 61 -butyric acid methyl ester)]-alt-[2,5-bis(octyloxy) benzene]} (PPCBMB), along with poly(3-hexylthiophene) (P3HT). The Langmuir-Schaeffer technique was used to prepare films, which were deposited on interdigitated gold substrates, and electrically characterized, with emphasis on the study of transport, conductivity and mobility mechanisms with respect to the solvents used. We found that the addition of P3HT significantly increased the conductivity of these materials. The xylene cast PPCBM, in both pure and mixed forms under dark conditions, presented the best conductivity results with respect to the other materials. However, when chloroform was used, it was found that OPCBMMB in both pure and mixed forms under light, exhibited the best conductivities. This is the first treatment, to our knowledge, of the impact of solvents on the electronic properties of poly(fullerene)s.

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Transport of holes in uniformly and non-uniformly protonated poly(o-methoxyaniline)

Cited by 10 publications

References 32 publications

Device model for poly(o‐methoxyaniline) field‐effect transistor

Device model for poly(o‐methoxyaniline) field‐effect transistor

Synthesis, Characterization, and Conductivity Studies of Poly-o-Methoxyaniline Intercalated into V2O5 Xerogel

Study of the Effect of Solvent on the Conductivity of Langmuir-Schaefer Films of Poly(Fullerene)s

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