Transport properties and spectrometric performances of CdZnTe gamma-ray detectors

Abstract

We investigated the influence of the ratio of the electron and hole mobility-lifetime products, (µτ) e,h and (µτ) e /(µτ) h , on the resolution of CdZnTe planar radiation detectors via Monte-Carlo simulations. Preliminary results show that this ratio exercises a larger effect than that of any other parameter on the detector's peak-to-valley ratio and resolution. We determined the range of values of the ratio (µτ) e /(µτ) h where the fast degeneration of the photopeak in CdZnTe detectors takes place at a gamma-ray energy 661.7 keV ( 137 Cs). We offer an explanation, based on the results of some of our experimental data, on the spectrometric performance of CdZnTe detectors.

Simulation Using Geant 4 of Axas-D System With Registration K-Series of Iodine in Activated Carbon for Ventilation Systems NPP

“…In the spectrum of gamma quanta produced by the decay of 241 Am nuclei, there is a large number of lines of very low intensity with energies above 60 keV [8]. Their presence in the calculated spectrum can be seen on the right edge of the distribution in Fig.…”

“…The semiconductor detector model used in this work is similar to the model described in detail in [8,9]. For calculations, the indicated model was adjusted by the specification of the KETEK AXAS-D detector.…”

Effect of Compensation Degree on the Detecting Properties of In-doped Cd0.9Zn0.1Te crystals

“…To produce these devices, high resistivity rates are required, which are observed in CZT:In crystals [3]. In spite of the great attention given by researchers to the technology and physical properties of CZT solid solution [4][5][6][7][8], the technological problems together with some physical limitations, hold back the wide introduction of such detectors. Hence -the low yield of suitable products, and hence the high cost of appliances.…”