Transport properties for Zn+ ion implanted InN films at low temperature

Xie, Weimin; Xie, Qingguo; Wang, Kang; Tao, Pengcheng; Zhang, Fengming; Wu, Xinglong

doi:10.1016/j.matlet.2017.05.058

Cited by 3 publications

(3 citation statements)

References 25 publications

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“…However, experimental evidence for GaN superconductivity is still lacking 7 . The traditional IV semiconductor superconductivity mechanism, which is driven by phonons strongly coupled to holes at the Γ point and requires the material to be p-type 10 , is not straightforwardly applicable in InN (the superconductivity of which is observed in n-type samples but not in p-type samples) 11–13 .…”

Section: Introductionmentioning

confidence: 99%

InN superconducting phase transition

Song

Shang

et al. 2019

Sci Rep

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InN superconductivity is very special among III–V semiconductors, as other III–V semiconductors (such as GaAs, GaN, InP, InAs, etc.) usually lack strong covalent bonding and thus seldom show superconductivity at low temperatures. Here, we probe the different superconducting phase transitions in InN highlighted by its microstructure. Those chemical-unstable phase-separated inclusions, such as metallic indium or In 2 O 3 , are intentionally removed by HCl acid etching. The quasi-two-dimensional vortex liquid-glass transition is observed in the sample with a large InN grain size. In contrast, the superconducting properties of InN with a small grain size are sensitive to acid etching, showing a transition into a nonzero resistance state when the temperature approaches zero. Since the value of ξ 0 (the zero-temperature-limit superconducting coherence length) is close to the grain size, it is suggested that individual InN grains and intergrain coupling should be responsible for the sample-dependent InN superconducting phase transition. Our work establishes a guideline for engineering superconductivity in III-nitride.

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Section: Introductionmentioning

confidence: 99%

InN superconducting phase transition

Song

Shang

et al. 2019

Sci Rep

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“…The test shows that when the InN buffer layer is introduced at a deposition temperature of 100 °C, the diffraction peak strength is significantly stronger than that at other temperatures. The InN film sample grows perpendicular to the substrate, which presents a high c-axis preferred orientation [28][29][30][31]. The test shows that when the InN buffer layer is introduced at a deposition temperature of 100 • C, the diffraction peak strength is significantly stronger than that at other temperatures.…”

Section: Analysis Of Grain Sizementioning

confidence: 98%

“…The test shows that when the InN buffer layer is introduced at a deposition temperature of 100 • C, the diffraction peak strength is significantly stronger than that at other temperatures. The InN film sample grows perpendicular to the substrate, which presents a high c-axis preferred orientation [28][29][30][31].…”

Section: Analysis Of Grain Sizementioning

confidence: 99%

Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate

2022

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In this study, InN films are grown at a relatively low temperature by electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) on free-standing diamond substrates. Due to the high lattice mismatch rate between InN film and the free-standing diamond substrate, the function of a buffer layer is to build a bridge between the substrate and film to reduce the lattice mismatch between them. Therefore, here, we study the performance impact of introducing an InN buffer layer at various deposition temperatures and explore the optimal buffer layer deposition temperature used to grow relatively high-quality InN films. The experimental results show that when an InN buffer layer is introduced at a deposition temperature of 100 °C, the growth direction of the InN film is perpendicular to the substrate with a high c-axis preferred orientation, the roughness of the surface is minimal, and the particle sizes are consistent with growth in the same direction. Additionally, the carrier mobility is highest, and the carrier concentration is lowest compared with other conditions.

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