Transport properties of carriers through nanocrystalline Lu₃N@C₈₀/Au interface

Abstract

The transport property of carriers passing through a nanocrystalline Lu3N@C80/Au interface has been studied by measuring impedance under various alternating voltages and DC biases. A depletion layer thicker than 110 µm is recognized in the Lu3N@C80/Au Schottky contact. Such a thick depletion layer indicates that the formation of space charge in the nanocrystalline Lu3N@C80 phase is difficult owing to an increase in LUMO energy, i.e., a decrease in the electron affinity of the Lu3N@C80 molecule. A high interfacial resistance is found to increase the transmission time of the carriers passing through the Lu3N@C80/Au Schottky contact. Such a high interfacial resistance may be ascribed to the low mobility of the carriers in the nanocrystalline Lu3N@C80 phase.

Electric field induced effects in Y3N@[C80]6− anionic solid

“…21 The Y 3 N cluster is slightly pyramidal inside the C 80 cage 22 and cannot rotate freely as planar M 3 N, such as Sc 3 N, Lu 3 N, and Er 3 N, does inside the cage. Recently, we have studied the carrier transport properties of Sc 3 N@C 80 , 23 Lu 3 N@C 80 , 24,25 and Er 3 N@C 80 26 by measuring the currentvoltage (i-v) characteristics. No significant temperature and electric field effects have be observed on those M 3 N@C 80 molecules because of small diameters of the endohedral clusters.…”