Transport properties of cubicNaxWO3near the insulator-metal transition

Facet‐Independent Electric‐Field‐Induced Volume Metallization of Tungsten Trioxide Films

“…This is equivalent to 0.3 electrons per WO 3 formula unit which would need an oxygen-vacancy concentration of ≈5%, if due solely to electron donation from oxygen vacancies, i.e., a vacancy concentration more than 30 times larger than observed. This is a surprising result since it is known that chemical doped WO 3 shows metallic behavior only for large concentrations of dopants, e.g., x > 0.08 for In x WO 3 [23,27] and even x > 0.25-0.3 for Na x WO 3 , [28][29][30] i.e., the number of carriers associated with the oxygen vacancies in IL gated WO 3 is about ten times smaller than the amount of Indium needed to metallize In x WO 3 and about 30 times below that needed to metallize WO 3 by Na doping. To understand this apparent contradiction, we use X-ray photoelectron spectroscopy (XPS) and Raman studies to explore changes in electronic structure and bonding.…”

Synthesis and characterization of electron and hole doped ternary palladium oxide: Sr1−A Pd3O4 (A = Na, Bi)

“…This behavior is consistent with the magnetic susceptibility measurement results of these samples where portions of charge carriers induced by Na + and Bi 3+ substitutions into the Sr 2+ site are localized on Pd + or Pd 3+ . The range of n for Sr 1−x A x Pd 3 O 4 (A = Na, Bi) is slightly larger than that of conventional oxide conductors like SnO 2 , but it is in the same order as that in a doped bronze, Na x WO 3 [25].…”

Influence of oxygen gas concentration on hydrogen sensing of Pt/WO3 thin film prepared by sol–gel process

“…However, the conduction of proton is considered to be negligible because the mobility of electrons in oxides is 10 5 -10 7 times faster than that of protons [23][24][25]. Thus the electrical conductivity is considered to be dependent on electrons.…”