Transport properties of indium tin oxide/p-InP structures

Abstract

I-V properties of indium tin oxide (ITO)/p-InP solar cell structures measured at various temperatures show that the conduction mechanism is dominated by tunneling at low forward bias, and by thermionic emission at high forward bias. An increase of barrier height of 200–300 meV was found for all ITO/InP diodes compared with Au/InP Schottky diodes. Donorlike defects were found to be responsible for the increase of barrier height, and to cause the defect-assisted tunneling conduction. The experimental results support the model of a buried n+/p junction with the n+ layer induced by the sputter deposition of ITO.

Rapid thermal stability of refractory metal and silicide contacts on p-InP

“…The different annealing behavior between our Ti contacts and those reported by Van Meirhaeghe et al [l] for the same contact is expected to be the result of a very large difference in the annealing time (10 s versus 10 min). The effect of the reverse current on U,, of a solar cell is evident from (5). For a reverse current decrease or increase by a factor of m, the amount of change in the open-circuit voltage is AU,, = f n U , In rn.…”

Effect of rapid thermal annealing on radio-frequency magnetron-sputtered GaN thin films and Au/GaN Schottky diodes

“…Moreover, such a defect-assistedtunneling phenomenon has also been identified as occurring at Ni-GaN Schottky diodes, 11 at PtSi/GaN Schottky contacts, 12 and at ITO/P-InP structures, 13 respectively. In the forward-biased situation, if there were many defects near the surface region, electrons would go through the barrier from n-type GaN to metal by defect-assisted tunneling, 11-14 thus greatly enhancing the tunneling probability.…”

“…A nitrogen-vacancy-related deep defect level, E t , near the surface of RTA-treated GaN thin films, measured by deep level transient spectroscopy ͑DLTS͒ 10 and secondary ion mass spectrometry ͑SIMS͒, was demonstrated to play a defect-assisted-tunneling [11][12][13][14] role in the conduction process of Au/GaN Schottky diodes. A nitrogen-vacancy-related deep defect level, E t , near the surface of RTA-treated GaN thin films, measured by deep level transient spectroscopy ͑DLTS͒ 10 and secondary ion mass spectrometry ͑SIMS͒, was demonstrated to play a defect-assisted-tunneling [11][12][13][14] role in the conduction process of Au/GaN Schottky diodes.…”

Organic Electro‐Optic Modulators with Substantially Enhanced Performance Based on Transparent Electrodes

“…There are various growth methods for TC materials, including metalorganic chemical vapor deposition (MOCVD), ion-assisted deposition (IAD), pulsed laser deposition (PLD) and sputtering [13][14][15][16][17][18][19][20][21][22]. Table 15.2 shows a few of the TCs of interest, such …”

“…13 Computational results for the MTLIA-EO structure using gold, copper and a perfect electric conductor (PEC) as the metallic material: (a) RF loss coefficient a RF ; (b) transmission line propagating dielectric constant « RF ; and (c) transmission line characteristic impedance Z 0 . We assumed the structure ofFigure 15.10 with s TC…”