“…The results indicate that ionizing radiation can damage the crystalline lattice by creating defects, although the defect formation probability strongly depends on the energy, mass, and angle of the incident ionizing radiation. Recent studies which monitor the electronic transport properties of carbon-based FETs support these conclusions, that is, a high tolerance to proton irradiation (e.g., SWCNT-FETs [5,6], graphene-FETs [7]) or high-energy photon irradiation (e.g., SWCNT [8][9][10][11], graphene-FETs [12][13][14]), where the transport properties of the carbon nanostructures are maintained. However, the overall device response to irradiation is mixed.…”