Transport property improvements of amorphous In–Zn–O transistors with printed Cu contacts via rapid temperature annealing

Won, Ju Yeon; Han, Young Hun; Seol, Hyun Ju; Lee, Ki June; Choi, Rino; Jeong, Jae Kyeong

doi:10.1016/j.tsf.2016.02.032

Cited by 7 publications

(3 citation statements)

References 14 publications

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“…Materials used in reverse offset printing 3.1. Ink Until now, various types of inks have been proposed for ROP including Au nanoparticles, 50) Ag nanoparticles and nanowires, 9,53) Cu nanoparticles, [54][55][56] Pd nanoparticles, 2) ITO nanoparticles, 56) PEDOT:PSS, 56) dielectric materials, 9,10,56) organic semiconductors, 9,10) etching resists, 7,30,31) quantum dots, 33) black/color pigments for color filters, 9,51) solder/flux, [57][58][59] and metal oxide precursors, 16,17) some of which are commercially available. Typically, colloidal dispersions with approximately 10 vol% of primary particles with a diameter ranging from 10 to 100 nm are used for ROP.…”

Section: Fundamentals Of Reverse Offset Printingmentioning

confidence: 99%

Recent advances in reverse offset printing: an emerging process for high-resolution printed electronics

Kusaka

Fukuda

Ushijima

2020

Jpn. J. Appl. Phys.

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Mechanisms, materials, and processes of high-resolution printing techniques dedicated to printed electronics are reviewed. Advanced printing methods, including reverse offset printing and adhesion contrast planography, use absorption of ink solvents by polydimethylsiloxane (PDMS) to semi-solidify inks before ink-transfer. The patterning principle transforms from wetting to adhesion and fracture; resolution problems encountered during the patterning of liquid inks (e.g. spreading, splitting, coalescence, bulges, and coffee ring shapes) can be avoided, and single-μm features can be achieved. After summarizing the fundamentals of reverse offset printing, details on the patterning mechanism and contact mechanics encountered during the process are shown together with the design concept of the ink formulation. Complementary processes for multilayered electronic devices (e.g. wet-on-wet for high-throughput production, buried electrode formation, taper formation, and vertical interconnections) and the prediction of pattern size integrity are presented.

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Section: Fundamentals Of Reverse Offset Printingmentioning

confidence: 99%

Recent advances in reverse offset printing: an emerging process for high-resolution printed electronics

Kusaka

Fukuda

Ushijima

2020

Jpn. J. Appl. Phys.

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“…In ROP, nanoparticle inks are typically formulated by adding a lowvapor-pressure solvent (residual solvent) with a high solubility parameter, i.e. low affinity with PDMS, into functional nanoparticle dispersions, such as gold [21], silver [22][23][24], copper [25,26] and palladium [27] so that an ink layer applied on a PDMS surface can exhibit a solid-like state plasticized by the residual solvent after drying, and thus can be transferred while retaining their structural integrity [28]. Since the residual solvent is generally no longer necessary after this patterning process in typical conductive inks, it is usually eliminated through a subsequent baking process so that the resultant nanoparticle layer can function properly.…”

Section: Introductionmentioning

confidence: 99%

High-resolution patterning of silica nanoparticle-based ionogels by reverse-offset printing and its characterization

Kusaka¹,

Kimnannara²,

Koutake³

et al. 2022

Flex. Print. Electron.

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In this study, nanoparticle-based, high-resolution patternable ionogels are presented to provide a route for realizing printed solid-state ionic devices. By incorporating an ionic liquid into a spherical silica nanoparticle suspension, a quasisolid ionogel layer compatible with reverse offset printing (ROP) with a spatial resolution of approximately 5 μm was realized. In-situ near IR spectroscopic analysis revealed a drying kinetics of the ionogel ink during printing, and a temporal margin for successful patterning in relation to its dry state was provided. In contrast to polymer-based gels, the present ionogel can be regarded as a porous medium of silica filled with ionic liquids with a certain degree of saturation. By optimizing ink formulations, ROP patterning was succeeded for saturation up to 102%, indicating the nanoscale pores between silica nanoparticles can be fully used as an ion-conductive phase in the proposed patternable gel. The conductivity depended drastically on saturation with a saturation exponent of approximately −7 according to the Archie’s law. From a complementary scratch test, an ionogel at a saturated condition still exhibited fragile but solid-like characteristics. As a demonstration, planar micro-supercapacitors fully printed with the reverse-offset printable ionogel and carbon inks were fabricated. A comparison with a drop-casted ionic liquid showing a similar capacitance indicated a limited ability of the carbon nanoparticle material used here while a relatively high resistance of the silica-nanoparticle based ionogel hindered a fast cyclic voltammetry response.

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“…In addition, using the polar solvents can significantly affect the quality of interface [24][25]. Another method which can adjust nanostructure of insulator-semiconductor interface is the annealing treatment process [7,[26][27][28].…”

Section: Introductionmentioning

confidence: 99%

The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

Hashemi

Bahari

Ghasemi

2017

Applied Surface Science

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Transport property improvements of amorphous In–Zn–O transistors with printed Cu contacts via rapid temperature annealing

Cited by 7 publications

References 14 publications

Recent advances in reverse offset printing: an emerging process for high-resolution printed electronics

Recent advances in reverse offset printing: an emerging process for high-resolution printed electronics

High-resolution patterning of silica nanoparticle-based ionogels by reverse-offset printing and its characterization

The low threshold voltage n-type silicon transistors based on a polymer/silica nanocomposite gate dielectric: The effect of annealing temperatures on their operation

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