Transverse magnetoresistance of GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml

Heisz, Jeffrey Maurice; Zaremba, E.

doi:10.1103/physrevb.53.13594

Cited by 23 publications

(15 citation statements)

References 12 publications

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“…The influence of an in-plane magnetic field on the orbital motion of carriers in a heterostructure or quantum well is a result of the finite width d of any 2D layer. This effect has been discussed previously in various contexts [18][19][20][21]. The Lorentz force on the electrons generated by the in-plane field B mixes up the electron motion along and across the confinement direction, thus resulting in a modification of the 2D dispersion, E(p) → E(B , p).…”

Section: A Phase-breaking By An In-plane Magnetic Field In 2d Inversmentioning

confidence: 76%

Quantum In-Plane Magnetoresistance in 2D Electron Systems

Meyer

Altshuler

2002

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We review various aspects of magnetoresistance in (quasi-)twodimensional systems subject to an in-plane magnetic field. Concentrating on single-particle effects, three mechanisms leading to magnetoresistance are discussed: the orbital effect of the magnetic field -due to inter-subband mixing -and the sensitivity of this effect to the geometrical symmetry of the system, the interplay between spin-orbit coupling and Zeeman splitting, and the influence of the field on spin scattering at magnetic impurities.

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Section: A Phase-breaking By An In-plane Magnetic Field In 2d Inversmentioning

confidence: 76%

Quantum In-Plane Magnetoresistance in 2D Electron Systems

Meyer

Altshuler

2002

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“…Positive B-dependence in the high-B region is also seen. Since similar positive magnetoresistance appears in 2DEGs covered with nonmagnetic materials, it should be attributed to intrinsic effects of 2DEGs, such as the orbital effect owing to the finite thickness of the inversion layer [29,30], or the resistivity increase induced by the spin polarization [31,32]. On the other hand, it is hard to explain the negative magnetoresistance observed in the low-B region for Θ = 0.42 ML [ Fig.…”

mentioning

confidence: 99%

Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces

2008

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Magnetotransport measurements have been performed on two-dimensional electron gases formed at InAs(110) surfaces covered with a submonolayer of Fe. Hysteresis in the magnetoresistance, a difference in remanent magnetoresistance between zero-field-cooling procedures and field-cooling procedures, and logarithmic time-dependent relaxation after magnetic field sweep are clearly observed at 1.7 K for a coverage of 0.42 monolayer. These features are associated with spin-glass ordering in the Fe film.PACS numbers: 75.70. Ak, 73.25.+i, 75.50.Lk Spin glasses are magnetic systems with randomly competing interactions. They have attracted great interest during the last few decades [1,2,3]. Spin-glass models and related methods have also been useful in other areas of science such as simulation of protein folding [4] and optimization problems in computer science [5]. Most of the attempts to understand spin glasses have been concerned with the behavior in three dimensions. It is generally believed that, in two dimensions, the spin-glass ordering does not occur at nonzero temperature. The lower critical dimension of spin-glass ordering has been shown to be d l > 2 for Heisenberg spins [6] and XY spins [7], and Ising spins with Gaussian distribution of disorder [8,9]. Although the situation for the Ising model with bimodal (±J) disorder was controversial [10,11], recent theoretical investigations do not support the existence of the spin-glass phase for T > 0 [12,13,14]. On the other hand, numerical calculations have demonstrated that the spin-glass-like ordering temperature can be nonzero for a two-dimensional (2D) Ising model with random nearestneighbor interactions and ferromagnetic second-neighbor interactions [15,16]. Experimentally, spin-glass behavior was found in thin films [17,18,19,20] and layered compounds [21,22,23]. However, no observation has been reported for a single layer system with strict two dimensionality.Submonolayer films of magnetic materials adsorbed on nonmagnetic substrates are promising candidates for 2D spin-glass systems. A random distribution of adsorbates can be obtained by deposition at low substrate temperatures, where surface diffusion is minimal and island growth is limited. In the case that the sign of the interaction depends on the relative position of adatoms, a competition between ferromagnetic and antiferromagnetic interactions is expected. As the substrate, narrow band-gap III-V semiconductors have a remarkable property. It is well known that a two-dimensional electron gas (2DEG) can be easily formed on the surface of InAs and InSb. Photoelectron spectroscopy measurements have shown that the position of the Fermi level lies above the conduction-band minimum at cleaved (110) surfaces with various kinds of adsorbed materials [24,25]. Recently the present authors have performed magnetotransport measurements on inversion layers formed on cleaved surfaces of p-type InAs [26,27] and InSb [28] covered with submonolayers of Ag or alkali metals. The observed coverage dependence of the Hall mobi...

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“…The calculated values are in reasonable agreement with the experimental values, as determined from the minima in the first derivative of the magnetoresistance. The differences between the measured and calculated depopulation fields are attributed to mobility changes, which are not taken into account [28,29].…”

Section: Analysis and Discussionmentioning

confidence: 99%

Sn delta-doping in GaAs

Kulbachinskii

Кытин

Lunin

et al. 1999

Semicond. Sci. Technol.

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We have prepared a number of GaAs structures δ-doped by Sn using the well known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterized by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher than for other δ-dopants, like Si and Be. The maximum carrier density determined by the Hall effect equals 8.4 × 10 13 cm −2 . For all samples several Shubnikov-de Haas frequencies were observed, indicating the population of multiple subbands. The depopulation fields of the subbands were determined by measuring the magnetoresistance with the magnetic field in the plane of the δ-layer. The experimental results are in good agreement with selfconsistent bandstructure calculations. This calculation shows that in the sample with the highest electron density also the conduction band at the L point is populated.

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Transverse magnetoresistance of GaAs/AlxGa1−

Cited by 23 publications

References 12 publications

Quantum In-Plane Magnetoresistance in 2D Electron Systems

Quantum In-Plane Magnetoresistance in 2D Electron Systems

Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces

Sn delta-doping in GaAs

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