Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review

et al. 2023

Preprint

The dynamic on-state resistance instability of a high-current cascode multi-GaN-chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The presented double pulse test (DPT) topology is utilized to evaluate switching dependencies on voltage, current, and frequency, showing its versatility in investigating the switching instability of the device. The extended defects in the buffer layer resulted in a decrease in dynamic on-state resistance (RDS-ON) under hard switching conditions. Despite this, no noticeable RDS-ON degradation occurs under harsh switching conditions due to electron de-trapping. This study comprehensively analyzes the dynamic stability of a multi-GaN-chip cascode module with devices.

Section: Topology and Methodologymentioning

confidence: 99%

Dynamic on-state resistance instability characterization of a Multi-chip-GaN MIS-HEMTs Cascode power module

et al. 2023

Preprint

“…In this section, we have provided insight into the dynamic R DS-ON behavior of multi-GaN-chip cascode devices under different switching conditions. Numerous studies have investigated buffer, barrier, and surface trapping caused by traps generated during the GaN HEMT growth process [39,40]. Careful designing of the buffer resistivity plays a key role in achieving high breakdown voltage and low on-state resistance in GaN HEMT devices.…”

Section: Mechanism Analysismentioning

confidence: 99%

Paralleled multi-GaN MIS–HEMTs integrated cascode switch for power electronic applications

Semicond. Sci. Technol.

et al. 2023

A cascode gallium nitride (GaN) switch integrating four paralleled GaN depletion-mode metal-insulator-semiconductor (MIS) high-electron-mobility transistors (HEMT) and a silicon MOSFET (Si-MOSFET) is presented. Each GaN chip is wire-bonded into a multi-chip power module to scale up the power rating. An optimized symmetric configuration and wire bonding of an integral package are used in the cascode switch. By utilizing an optimized packaging approach, the performance of the multi-GaN-chip cascode switch was evaluated through both static and dynamic characterizations. The constructed cascode switch provides a low-static on-state resistance of 72 mΩ and an off-state blocking capability of 400 V with a positive threshold voltage of 2 V. Analysis of dynamic switching characteristics are discussed and demonstrates stable dynamic on-state resistance (RDS-ON) in inductive load circuits with switching dependencies of voltage, frequency, time, and temperature. The extended defects from buffer caused a minimal decrease in dynamic and static RDS-ON with respect to hard switching conditions. However, there was no noticeable degradation in RDS-ON under harsh switching conditions. This study provides a complete analysis of the multi-GaN-chip cascode switch, including MIS-HEMT manufacturing, cascode packaging and static and dynamic characterizations.

“…However, various GaN devices suffer from dynamic on-state resistance (R DS-ON ) degradation during system-level operations, which hinders their practical use [5,6]. One of the reasons is electron trapping or detrapping from buffer traps and/or surface traps, and hot electron generation in the channel due to hard switching conditions [7]. Despite numerous advanced technologies that mitigate the current collapse, dynamic R DS-ON degradation remains a major concern for commercial GaN devices.…”

mentioning

confidence: 99%

“…Discussions: In this section, we have discussed the dynamic R DS-ON reduction of a multi-GaN-chip cascode power module under different switching conditions. A number of studies have investigated the trapping of barrier, surface, and buffer layers caused by traps formed during GaN HEMT growth [7]. Achieving high breakdown voltage and low on-state resistance in GaN HEMT devices depends on carefully designing buffer resistivity [9].…”

mentioning

confidence: 99%

Dynamic on‐state resistance instability characterization of a multi‐chip‐GaN MIS‐HEMTs cascode power module

et al. 2023

Electronics Letters

The dynamic on‐state resistance instability of a high‐current cascode multi‐GaN‐chip power module under high frequency and voltage switching conditions is demonstrated in this paper. The presented double pulse test topology is utilized to evaluate switching dependencies on voltage, current, and frequency, showing its versatility in investigating the switching instability of the device. The extended defects in the buffer layer resulted in a decrease in dynamic on‐state resistance (RDS‐ON) under hard switching conditions. Despite this, no noticeable RDS‐ON degradation occurs under harsh switching conditions due to electron de‐trapping. This study comprehensively analyzes the dynamic stability of a multi‐GaN‐chip cascode module with devices.