Trap Density of States Measured by Photon Probe on Amorphous-InGaZnO Thin-Film Transistors

Chang, Youn‐Gyoung; Kim, Dae-Hwan; Ko, Gunwoo; Lee, Kimoon; Kim, Jae-Hoon; Im, Seongil

doi:10.1109/led.2010.2102739

Cited by 26 publications

(18 citation statements)

References 10 publications

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“…2 were well supported by trap DOS measurements by PECCS which was introduced elsewhere as a more direct tool to probe the interfacial traps by our group [8]- [9]. In Fig.…”

Section: Analysis Of Self-heating Effect On Short Channel Amorphous Isupporting

confidence: 63%

“…For the electrical measurements to observe stress-recovery, the forward-measurement was normally implemented without switching the source (S) and drain (D) after bias stress, so that the same terminal condition might be maintained, but for the reverse-measurement, we switched the S and D, to see any difference in respect of time-dependent recovery. Interfacial trap density of state (DOS) measurement was carried out by photo-excited charge collection spectroscopy (PECCS) with an average optical power density of all monochromatic lights (wavelength rage of 350-1000 nm) of ~ 0.1 mW/cm 2 [8]- [9]. Fig.…”

Section: Methodsmentioning

confidence: 99%

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Analysis of Self-Heating Effect on Short Channel Amorphous InGaZnO Thin-Film Transistors

Lee

Jeon

Choi

et al. 2015

IEEE Electron Device Lett.

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We report on a TFT degradation encountered in short channel a-IGZO TFTs under high applied power condition leading to self-heating. Negative shift was observed in the initial stage of stress period followed by positive shift with severe degradation. To understand the causes of this phenomenon in depth, trap density-of-states were measured by photo-excited charge-collection spectroscopy and time dependent recovery of stressed device samples was also studied. As a result, we found that the combination of hot carrier effect and self-heating in channel was responsible for the degradation.Index Terms-amorphous InGaZnO (a-IGZO), thin-film transistor, self-heating effect, hot carrier effect, density of states. 0741-3106 (c)

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“…2 were well supported by trap DOS measurements by PECCS which was introduced elsewhere as a more direct tool to probe the interfacial traps by our group [8]- [9]. In Fig.…”

Section: Analysis Of Self-heating Effect On Short Channel Amorphous Isupporting

confidence: 63%

Section: Methodsmentioning

confidence: 99%

Analysis of Self-Heating Effect on Short Channel Amorphous InGaZnO Thin-Film Transistors

Lee

Jeon

Choi

et al. 2015

IEEE Electron Device Lett.

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“…The illumination intensities in this spectral range were measured in the ranges of 0.1 to 0.5 mW cm − 2 (see Supplementary Figure S3 Ultrasensitive PbS QD-sensitized InGaZnO hybrid photoinverter DK Hwang et al spectral region (Figure 3a) due to the wide energy bandgap of 3.4 eV (corresponding to the wavelength of 364 nm), and, as in our previous study, its defect energy levels responded to photons over 2.0 eV (corresponding to the wavelength of 620 nm). 34 As seen in Figure 3b, the PbS-OA/IGZO TFTs did not show significant photoresponsive behavior, indicating that the long alkyl chains block the pathway of the photogenerated charge carrier transfer between PbS QD and the IGZO layer. In contrast, the PbS-EDT (Processed with MO)/IGZO TFTs exhibited photodetection capabilities for NIR light up to 1400 nm (see Figure 3c), which matched the absorption spectra of the PbS-EDT film well.…”

Section: Phototransistor Characteristicsmentioning

confidence: 88%

Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

et al. 2016

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Lead sulfide (PbS) quantum dots (QDs) have great potential in optoelectronic applications because of their desirable characteristics as a light absorber for near-infrared (NIR) photodetection. However, most PbS-based NIR photodetectors are two-terminal devices, which require an integrated pixel circuit to be practical photosensors. Here we report on PbS QD/indium gallium zinc oxide (InGaZnO, IGZO) metal oxide semiconductor hybrid phototransistors with a photodetection capability between 700 and 1400 nm, a range that neither conventional Si nor InGaAs photodetectors can cover. The new hybrid phototransistor exhibits excellent photoresponsivity of over 10 6 A W − 1 and a specific detectivity in the order of 10 13 Jones for NIR (1000 nm) light. Furthermore, we demonstrate an NIR (1300 nm) imager using photogating inverter pixels based on PbS/IGZO phototransistors at an imaging frequency of 1 Hz with a high output voltage photogain of~4.9 V (~99%). To the best of our knowledge, this report demonstrates the first QD/metal oxide hybrid phototransistor-based flat panel NIR imager. Our hybrid approach using QD/metal oxide paves the way for the development of gate-tunable and highly sensitive flat panel NIR sensors/ imagers that can be easily integrated.

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“…For process optimization and practical application of a-IGZO TFTs to their circuits and systems, extraction of the subgap densityof-states [DOS; g(E)] over the bandgap is important because it determines the long-term instability as well as the electrical properties. There are useful reports on the extraction of g(E) in a-IGZO TFTs using the capacitance-voltage (C-V ) characteristics [3], [4], photo-induced shift of the threshold voltage (V T ) [5], and numerical simulation [6]. However, the optical and electrical effects may cause a drift of intrinsic characteristics during the extraction process.…”

Section: Introductionmentioning

confidence: 99%

Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors

Jun

Bae

et al. 2013

IEEE Electron Device Lett.

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We report a unified subthreshold coupling factor technique for a simultaneous extraction of the surface potential (ψ S ) and the subgap density-of-states [DOS: g(E)] over the bandgap in amorphous semiconductor thin film transistors (TFTs). It is fully based on the experimental gate bias-dependent coupling factor [m(V GS )] under subthreshold bias. Through the proposed technique only with current-voltage data under subthreshold operation, a unified extraction of the DOS with a consistent mapping of the gate bias (V GS ) to the subgap energy is obtained. Applying to amorphous InGaZnO TFTs, g(E) is obtained to be a superposition of two exponential functions with N TA = 1.62 × 10 17 eV −1 cm −3 and kT TA = 0.026 eV for the tail states while N DA = 6.5 × 10 16 eV −1 cm −3 and kT DA = 0.22 eV for the deep states. Index Terms-Amorphous InGaZnO (a-IGZO), coupling factor, subgap density-of-states (DOS), subthreshold current, surface potential, thin film transistors (TFT).

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Trap Density of States Measured by Photon Probe on Amorphous-InGaZnO Thin-Film Transistors

Cited by 26 publications

References 10 publications

Analysis of Self-Heating Effect on Short Channel Amorphous InGaZnO Thin-Film Transistors

Analysis of Self-Heating Effect on Short Channel Amorphous InGaZnO Thin-Film Transistors

Ultrasensitive PbS quantum-dot-sensitized InGaZnO hybrid photoinverter for near-infrared detection and imaging with high photogain

Unified Subthreshold Coupling Factor Technique for Surface Potential and Subgap Density-of-States in Amorphous Thin Film Transistors

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