2018
DOI: 10.1109/tdei.2017.006886
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Trap energy distribution in polymeric insulating materials through surface potential decay method

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Cited by 34 publications
(18 citation statements)
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“…After the 3 min polarization, the sample is transported under the Kelvin probe of the electrostatic voltmeter to measure the decay of the surface potential for 40 min. The trap energy level ( E t ) and trap density N ( E t ) are calculated from the SPD measurement (i.e., V − t characteristics) as follows : Et=italickTln()γt N()Et=ε0εrtitalickTf0()EtL2qdVdt where k is the Boltzmann constant, 1.38 × 10 −23 J/K; T is the surrounding temperature; γ is the escape frequency of the trapped charge carriers, 4.17 × 10 13 s −1 ; ε 0 is the dielectric constant, 8.85 × 10 −12 F/m; t is the time; f 0 ( E t ) is 1; L is the thickness of the sample, 150 × 10 −6 m; q is the unit electron charge, 1.6 × 10 −19 C.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…After the 3 min polarization, the sample is transported under the Kelvin probe of the electrostatic voltmeter to measure the decay of the surface potential for 40 min. The trap energy level ( E t ) and trap density N ( E t ) are calculated from the SPD measurement (i.e., V − t characteristics) as follows : Et=italickTln()γt N()Et=ε0εrtitalickTf0()EtL2qdVdt where k is the Boltzmann constant, 1.38 × 10 −23 J/K; T is the surrounding temperature; γ is the escape frequency of the trapped charge carriers, 4.17 × 10 13 s −1 ; ε 0 is the dielectric constant, 8.85 × 10 −12 F/m; t is the time; f 0 ( E t ) is 1; L is the thickness of the sample, 150 × 10 −6 m; q is the unit electron charge, 1.6 × 10 −19 C.…”
Section: Methodsmentioning
confidence: 99%
“…After the 3 min polarization, the sample is transported under the Kelvin probe of the electrostatic voltmeter to measure the decay of the surface potential for 40 min. The trap energy level (E t ) and trap density N(E t ) are calculated from the SPD measurement (i.e., V − t characteristics) as follows [26]:…”
Section: Electrical Measurementsmentioning
confidence: 99%
“…Equation (5) implies that a deeper trap level has a higher potential barrier in hopping polarization behavior. Moreover, increasing the density of deep traps increases the possibility of trapping during carrier migration, enhances trap trapping effects and reduces the mean free path of carriers [29]. Thus, more energy will be required for hopping polarization with the growth of the deep traps density.…”
Section: Thermal Ion Polarization Behavioursmentioning
confidence: 99%
“…Previous works [29] showed that the increase in the energy level and density of deep traps will have an excellent effect on the breakdown performance of electrical insulating dielectrics. Hence, the effect of deep traps on the breakdown strength of samples will be studied in conjunction with molecular chain displacement in this section.…”
Section: Electrical Breakdown Model Of Coupling Molecular Chain Displmentioning
confidence: 99%
“…In this section, we will study lifetime improvement and its mechanism under repetitive impulse voltages, by considering the influence of trap energy distribution on carrier transportation and charge dissipation with voltage reversion. Thus, isothermal surface potential decay (ISPD) [29,30] technique was conducted to study the charge transport characteristics of PI films before and after surface modification, revealing the energy distribution of both electron-type and holetype traps [31].…”
Section: Surface Modification Of Polyimide Filmsmentioning
confidence: 99%