Trap-limited hydrogen diffusion in doped silicon

Herrero, Carlos P.; Stutzmann, M.; Breitschwerdt, A.; Santos, P. V.

doi:10.1103/physrevb.41.1054

Cited by 72 publications

(23 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…15,17 For increasing hydrogenation time we would expect the movement of a front into the sample separating a fully passivated paramagnetic layer from an unpassivated ferromagnetic one. 42 Therefore, short-time hydrogenation should lead to similar changes in the SWR spectrum as a reduction in sample thickness via etching. Indeed, upon short-time hydrogenation the spin-wave resonances are also shifted to smaller magnetic fields ͓Fig.…”

Section: Partially Hydrogenated Samplementioning

confidence: 99%

“…In our model we divide the hydrogenation profile into a fully passivated region ͑0͒, a partially hydrogenated region ͑I͒ corresponding to the tail in the hydrogenation profile, and an unpassivated region ͑II and III͒. 42 In the fully passivated region ferromagnetism will be suppressed completely, while in the unpassivated region magnetic properties will remain unchanged. The partially hydrogenated tail will lead to a region with rapidly changing hole concentration and thus rapidly changing uniaxial anisotropy field H aniso 001 ͑z͒.…”

Section: ͑25͒mentioning

confidence: 99%

See 1 more Smart Citation

Spin-wave resonances and surface spin pinning inGa1−xMnxAsthin films

et al. 2009

View full text Add to dashboard Cite

We investigate the dependence of the spin-wave resonance ͑SWR͒ spectra of Ga 0.95 Mn 0.05 As thin films on the sample treatment. We find that for the external magnetic field perpendicular to the film plane, the SWR spectrum of the as-grown thin films and the changes upon etching and short-term hydrogenation can be quantitatively explained via a linear gradient in the uniaxial magnetic anisotropy field in growth direction. The model also qualitatively explains the SWR spectra observed for the in-plane easy-axis orientation of the external magnetic field. Furthermore, we observe a change in the effective surface spin pinning of the partially hydrogenated sample, which results from the tail in the hydrogen-diffusion profile. The latter leads to a rapidly changing hole concentration/magnetic anisotropy profile acting as a barrier for the spin-wave excitations. Therefore, short-term hydrogenation constitutes a simple method to efficiently manipulate the surface spin pinning.

show abstract

Section: Partially Hydrogenated Samplementioning

confidence: 99%

Section: ͑25͒mentioning

confidence: 99%

Spin-wave resonances and surface spin pinning inGa1−xMnxAsthin films

et al. 2009

View full text Add to dashboard Cite

show abstract

“…The time required for a complete passivation of GaMnAs can be attributed to the low extraction voltage from the plasma of Ϫ200 V used and the trap limited diffusion of hydrogen. 16 As a first step, the incorporation of deuterium into the GaMnAs layers was verified with secondary ion mass spectroscopy ͑SIMS͒. The depth profiles shown in Fig.…”

mentioning

confidence: 99%

Passivation of Mn acceptors in GaMnAs

Brandt

Goennenwein

Wassner

et al. 2004

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

The effects of hydrogen and deuterium on ferromagnetic GaAs doped with high concentrations of Mn (≈1021 cm−3) are studied. Secondary ion mass spectroscopy depth profiles show that D is incorporated in the same concentration as Mn. The epilayers change from metallic to semiconducting behavior upon hydrogenation. Fourier transform infrared absorption measurements show the As–H and As–D local vibrational modes characteristic for the complexes of hydrogen with group-II acceptors in GaAs.

show abstract

“…The large scatter in data for diffusion of hydrogen through silicon 148,[196][197][198][199][200][201][202][203][204][205][206][207][208][209][210][211][212][213][214] . We have only plotted data for hydrogen diffusion (no isotopes) and have indicated the type of silicon where known.…”

Section: Noble Gasesmentioning

confidence: 99%

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Rushton

Aldous

Himsworth

2014

Review of Scientific Instruments

107

View full text Add to dashboard Cite

Experiments using laser cooled atoms and ions show real promise for practical applications in quantumenhanced metrology, timing, navigation, and sensing as well as exotic roles in quantum computing, networking and simulation. The heart of many of these experiments has been translated to microfabricated platforms known as atom chips whose construction readily lend themselves to integration with larger systems and future mass production. To truly make the jump from laboratory demonstrations to practical, rugged devices, the complex surrounding infrastructure (including vacuum systems, optics, and lasers) also needs to be miniaturized and integrated. In this paper we explore the feasibility of applying this approach to the Magneto-Optical Trap; incorporating the vacuum system, atom source and optical geometry into a permanently sealed microlitre system capable of maintaining 10 −10 mbar for more than 1000 days of operation with passive pumping alone. We demonstrate such an engineering challenge is achievable using recent advances in semiconductor microfabrication techniques and materials.PACS numbers: 07.07.Df, 37.10.Gh, 07.30.Kf, I. ULTRACOLD QUANTUM TECHNOLOGYSince the first demonstrations of atoms and ions at sub-millikelvin temperatures in the mid-1980s, the field of atomic physics has been revolutionized by laser cooling and trapping as it provides researchers with a method to probe some of the purest and sensitive quantum systems available. This field is still highly productive and recently has put significant emphasis on the practical applications of this technology beyond the laboratory 1,2 . It was evident very early on that ultracold matter would be an indispensable tool in precise timing applications and a recent demonstration 3 has shown extremely low instabilities at the 10 −18 level. The wavelike nature of atoms as they are cooled to lower temperatures can be used to form atomic interferometers that outperform optical counterparts in measurements of accelerated reference frames 4-7 , which are important for inertial guidance systems, but can also provide sensitive measurements of mass, charge and magnetic fields [8][9][10][11] . Greater sensitivity beyond the classical limit is possible via squeezed 12 and entangled states 13-15 , which are also fundamental attributes for quantum computing 16,17 , and long distance quantum networking 18 . Ultracold matter has been used in the emerging field of quantum simulation 19 and is an indispensable tool in determining fundamental constants 20 , testing general relativity 21 and defining measurement standards 22 . Many researchers and industries believe such tools will be a major part of the 'second quantum revolution' in which the more 'exotic' properties of quantum physics are applied for practical applications 23,24 .The field of ultracold matter has reached a matua) m.d.himsworth@soton.ac.uk rity in both experimental methods and theoretical understanding allowing experiments to begin leaving the laboratory 25-27 . These systems are bespoke, rarely take up a ...

show abstract

Trap-limited hydrogen diffusion in doped silicon

Cited by 72 publications

References 20 publications

Spin-wave resonances and surface spin pinning inGa1−xMnxAsthin films

Spin-wave resonances and surface spin pinning inGa1−xMnxAsthin films

Passivation of Mn acceptors in GaMnAs

Contributed Review: The feasibility of a fully miniaturized magneto-optical trap for portable ultracold quantum technology

Contact Info

Product

Resources

About