2023
DOI: 10.1016/j.infrared.2023.104788
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Trap-mode PbSe mid-infrared photodetector with decreased-temperature processing method

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Cited by 3 publications
(2 citation statements)
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“…(3) Photodetectors based on lead chalcogenide bulk materials need to undergo hightemperature sensitization at 300-600 • C in a specific atmosphere, such as an oxygenrich and iodine-rich atmosphere [81]. However, the existing sensitization process lacks repeatability, stability, and uniformity, thereby restricting their application [82,83]. Lead chalcogenide CQD photodetectors can operate at room temperature, reducing the manufacturing cost and difficulty.…”
Section: Pbs Cqd Photodetectorsmentioning
confidence: 99%
“…(3) Photodetectors based on lead chalcogenide bulk materials need to undergo hightemperature sensitization at 300-600 • C in a specific atmosphere, such as an oxygenrich and iodine-rich atmosphere [81]. However, the existing sensitization process lacks repeatability, stability, and uniformity, thereby restricting their application [82,83]. Lead chalcogenide CQD photodetectors can operate at room temperature, reducing the manufacturing cost and difficulty.…”
Section: Pbs Cqd Photodetectorsmentioning
confidence: 99%
“…Semiconductor nanoparticles (NPs) are particularly appealing due to their unique structural, optical, and electrical characteristics compared to bulk materials. Among these materials, lead iodide (PbI 2 ) stands out as a noteworthy member of the layered semiconductor family, garnering significant attention from researchers due to its superior properties [10,11]. PbI 2 possesses a direct band gap ranging from 2.3 to 2.6 eV at room temperature.…”
Section: Introductionmentioning
confidence: 99%