Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Latrach, Soumaya; Frayssinet, Éric; Defrance, N.; Chenot, Sébastien; Cordier, Y.; Gaquière, C.; Maâref, H.

doi:10.1016/j.cap.2017.09.003

Cited by 13 publications

(2 citation statements)

References 47 publications

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“…The dependency between gate capacitance C g and gate voltage is studied by performing AC analysis with frequency of operation fixed at 1 MHz [92], source and drain terminals being grounded (V S = V D = 0 V), and gate voltage (V G ) being swept from -10 V to 0 V. From Fig. 12, it is indicative that the CV characteristics changes around the same gate voltage, which reaffirm the feature that threshold voltage for the devices (combination of gate-shape and field plate) is uniform.…”

Section: F Capacitance-voltage Characteristicsmentioning

confidence: 99%

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

2021

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Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving material and processing technology. In this paper, a detailed analysis of gate-shaped AlGaN / GaN HEMT with field plate is presented. Although AlGaN / GaN HEMT with field-plate is well known, its blending with gate-shaping leading to a more robust and reliable behaviour is described in this paper. It is observed that the threshold voltage and transconductance invariably remain constant for various combinations of gate-shaped and field plate placements. The threshold voltage for all the devices are found to be -5.8 V. The peak transconductance for the devices without field plate and with field plate is ∼ 0.16 S/mm and ∼ 0.15 S/mm, respectively. Apart from leakage current, the electric field also gets mitigated for both gate-shaped and field-plated devices by ∼ 45% and ∼ 68%, respectively. The moderation in electric field further assists in the reduction of electron temperature for gate-shaped and field-plated structures by ∼ 12% and ∼ 85%, respectively. Additionally, breakdown voltage increases for the gate-shaped devices to 133 V as compared to 120 V of conventional devices without field plate. Significant reduction in leakage current, electric field, and electron temperature is accompanied by a minor increment in capacitance for the field-plated structure, hence, the proposed structure is expected to enhance reliability of the device. Thus, it is anticipated that the proposed devices with enhanced reliability would be a step ahead of conventional devices and would find major applications in high power domain.INDEX TERMS Capacitance voltage (CV), electron temperature, GaN HEMT, gate shape, leakage current.

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Section: F Capacitance-voltage Characteristicsmentioning

confidence: 99%

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

2021

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“…These features have inspired experiments to compare the performance characteristics of electron devices based on an AlGaN= GaN heterostructure versus an AlGaN=InGaN=GaN heterostructure. [19][20][21][22] On the other hand, most experimental and theoretical studies pertaining to distributed surface donor states are focused on AlGaN=GaN-, AlGaN=AlN=GaN-, and InAlN=AlN=GaN-based heterostructures. 2,4,5,[23][24][25] In all these cases, the GaN buffer is considered as the channel material.…”

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confidence: 99%

Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states

Ghosh

Ganguly

2018

Jpn. J. Appl. Phys.

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An analytical modeling framework is presented for the two-dimensional electron gas (2DEG) density and bare surface barrier height in AlGaN/InGaN/GaN double heterostructures, which use an InGaN layer as the conducting channel. The 2DEG formed at the AlGaN/InGaN heterointerface originates from the surface donor states on the AlGaN surface. The model is derived by the electrostatic analysis of different material interfaces. Numerical simulations are performed to determine the effect of a thick channel (InGaN layer). The presented results agree with the published experimental results, and they can easily be used for the advanced design and characterization of AlGaN/InGaN/GaN-based heterostructures.

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Simulation Tools for E-Learning in Microelectronics and Nanoelectronics at the University

Demenkova

Indrishenok

Pevtsov

2020

Communications in Computer and Information Science

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Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Cited by 13 publications

References 47 publications

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

Modeling and simulation of AlGaN/InGaN/GaN double heterostructures using distributed surface donor states

Simulation Tools for E-Learning in Microelectronics and Nanoelectronics at the University

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