2001
DOI: 10.1063/1.1329667
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Trapping in organic field-effect transistors

Abstract: Articles you may be interested inDetermination of the interface trap density of rubrene single-crystal field-effect transistors and comparison to the bulk trap density Trap evaluations of metal/oxide/silicon field-effect transistors with high-k gate dielectric using charge pumping method Appl. Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulatorCurrent-voltage characteristics of single-and polycrystalline organic field-effect transistors are analyz… Show more

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Cited by 70 publications
(25 citation statements)
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“…In the past these traps were often thought to be primarily caused by grain boundaries in the conduction channel of the organic semiconductor [20,21]. This is not consistent with recent reports of higher field-effect mobilities in devices with smaller average grain sizes due to oxide-surface modification [6,22].…”
Section: Discussionmentioning
confidence: 84%
“…In the past these traps were often thought to be primarily caused by grain boundaries in the conduction channel of the organic semiconductor [20,21]. This is not consistent with recent reports of higher field-effect mobilities in devices with smaller average grain sizes due to oxide-surface modification [6,22].…”
Section: Discussionmentioning
confidence: 84%
“…The disorder is observed experimentally through the thermally activated field-effect mobility and its gate voltage dependency. [8][9][10][11][12] A further common feature of disordered organic field-effect transistors is the temperature dependence of the threshold voltage, V th , 11,12 which is addressed in this letter. It is argued that V th , as used in literature, is a fit parameter with no clear physical basis.…”
mentioning
confidence: 99%
“…The mobility increase from its room temperature value of 3 to 10 5 cm 2 /Vs at 1.7 K followed a power law type of temperature dependence [103,277,282,283]. Furthermore, bandassisted charge carrier transport at low temperatures was confirmed by quantum Hall and cyclotron resonance experiments in acene single crystals [277,284,285].…”
Section: Historical Development Perspectivesmentioning
confidence: 61%