Traps and defects in pre‐ and post‐ stressed AlGaN–GaN high electron mobility transistors

Sin, Yongkun; Foran, Brendan; Joh, Jungwoo; Alamo, J.A. del

doi:10.1002/pssa.201001079

Cited by 16 publications

(8 citation statements)

References 10 publications

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“…As a direct consequence of stressing, formation of new traps and/or increase in trap activity has often been linked with degradation . Moreover, trapping itself has even been cited as the principal/supporting mechanism behind the observed stress induced decrease in drain current depending upon the device or stress regime .…”

Section: Electrical Structural Analysis and Discussionmentioning

confidence: 99%

On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs

Ghosh

Dinara

Mahata

et al. 2016

Physica Status Solidi (a)

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Reverse bias stressing in AlGaN/GaN high electron mobility transistors (HEMTs) compelled severe degradation of drain current (I DS ) whereas gate current (I G ) remained largely unaffected. Besides, the response of access region conductivity to pulse drives was found to deteriorate gradually as a result of stress, and an interacting deep level in the form of kink effect was observed. Post degradation, SEM imaging evidenced the field-induced formation of protruding particles, immediately adjacent to the gate electrode. Auger spectroscopy and elemental mapping chemically identified these insulating particles as gallium oxide. Barrier/channel consumption in the form of electrochemical oxidation is thus held responsible for I DS degradation whereas I G degradation is entirely attributed on the presence of passivation layer. SEM micrographs of the (a) tested, and (b) untested finger of a À80 V bias stressed HEMT. (c) Auger spectra from an insulating particle, whereas (d) and (e) are oxygen and gallium elemental maps of the entire frame (c).

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Section: Electrical Structural Analysis and Discussionmentioning

confidence: 99%

On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs

Ghosh

Dinara

Mahata

et al. 2016

Physica Status Solidi (a)

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“…Deep‐level transient spectroscopy (DLTS) measurements were performed after stress, to detect a new peak ( E a = 1.08 eV) attributed to interface traps 3. Electrical stress results in a significant increase in the density of 0.5 eV traps, which is attributed to point defects in the AlGaN barrier 4, 5. Gate sinking into the barrier was observed in TEM images for an L g = 0.15 µm T‐gate device stressed in dry nitrogen 6.…”

Section: Introductionmentioning

confidence: 94%

“…Reliability had therefore become fundamental for product qualification, and GaN‐based HFETs had their documented share of three‐temperature life‐testing, high‐temperature storage, humidity testing, thermal cycling, ESD/EOS testing, mechanical testing, and so forth. However, it is more instructive to turn one's attention from the life‐testing to the study of physical degradation mechanisms 1–6.…”

Section: Introductionmentioning

confidence: 99%

Micro‐Raman spectroscopy observation of field‐induced strain relaxation in AlGaN/GaN heterojunction field‐effect transistors

Dun

Jiang

et al. 2012

Physica Status Solidi (a)

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A new method to characterize the strain status in the electrical degradation of AlGaN/GaN heterojunction field-effect transistors (HFETs) using micro-Raman spectroscopy at a wavelength of 532 nm was proposed. This method was applied to the devices stressed under different dc biased configurations to find the direct evidence of strain relaxation due to inverse piezoelectric effect (IPE). It was observed that the strain relaxation in AlGaN barrier layers became more severe with the increment of the electric field applied externally, which would lead to the rise of the gate leakage current. The deterioration of the gate leakage current shows a time-dependent feature.

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“…It is demonstrated that inverse piezoelectric-induced degradation can be alleviated by reducing Al content in the AlGaN barrier, by optimizing field plate to counterbalance the strain, and even by introducing an AlGaN back barrier. [7][8][9][10] Nevertheless, reliability of GaN RF HEMTs at stressing voltage higher than 100 V remains to be investigated.…”

Section: Introductionmentioning

confidence: 99%

Evolution of Deep Traps in GaN‐Based RF High Electron Mobility Transistors under High Voltage OFF‐State Stress

Huang

Wang

et al. 2022

Physica Rapid Research Ltrs

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An unrecoverable degradation of gate leakage is observed in AlGaN/GaN high electron mobility transistors (HEMTs) under high OFF‐state drain bias stress up to 200 V. Current‐mode deep‐level transient spectroscopy is developed for in situ observation of evolution of traps in the HEMTs before and after stress. It is revealed that two discrete traps, with activation energy of 0.54 and 0.69 eV, have converted into a deeper and broader trap (0.86 eV) after the stress, along with an increased apparent capture cross section (from 1.71 × 10−17–1.11 × 10−15 cm2 to 9.05 × 10−15 cm2). The conversion lowers down the tunneling barrier between metal and the AlGaN barrier, which facilitates trap‐assisted gate leakage in reversed biased AlGaN/GaN HEMTs. Engineering of deep traps in the AlGaN/GaN epilayers is essential for promoting and upgrading of power capability of GaN‐based RF HEMTs.

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Traps and defects in pre‐ and post‐ stressed AlGaN–GaN high electron mobility transistors

Cited by 16 publications

References 10 publications

On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs

On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs

Micro‐Raman spectroscopy observation of field‐induced strain relaxation in AlGaN/GaN heterojunction field‐effect transistors

Evolution of Deep Traps in GaN‐Based RF High Electron Mobility Transistors under High Voltage OFF‐State Stress

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