Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates

Sghaier, N.; Trabelsi, M.; Yacoubi, N.; Bluet, Jean‐Marie; Souifi, Abdelkader; Guillot, G.; Gaquière, Christophe; Dejaeger, J.C.

doi:10.1016/j.mejo.2005.05.014

Cited by 24 publications

(21 citation statements)

References 27 publications

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“…. This E a value was previously found by Sghaier et al [25] observed a similar defect with an activation energy close to 0.31 eV by DLTS using boxcar technique. Nozaki et al [26] have shown a comparable defect with an activation energy of 0.28 eV using I-DLTS (current-DLTS) technique performed on AlGaN/GaN MODFET.…”

Section: Resultssupporting

confidence: 88%

Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements

Charfeddine¹,

Gassoumi²,

Mosbahi³

et al. 2011

JMP

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We investigate high electron mobility transistors (HEMT's) based on AlGaN/GaN grown by molecular beam epitaxy on Silicon substrates. The improvement of the performances of such transistors is still subject to the influence of threading dislocations and point defects which are commonly observed in these devices. Deep levels in FAT-HEMT's are characterized by using Capacitance-Voltage (C-V) measurements, from which we can extract the barrier height and the donor concentration in the AlGaN layer. Deep Level Transient Spectroscopy (DLTS) Technique is also employed to identify defects in the heterostructure. Measurements reveal the presence of one electron trap with the activation energy E 1 = 0.30 eV and capture cross-section σ n = 3.59 × 10 -19 cm 2 . The localization and the identification of this trap have been discussed.

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Section: Resultssupporting

confidence: 88%

Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements

Charfeddine¹,

Gassoumi²,

Mosbahi³

et al. 2011

JMP

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“…[1 -4,6,8,10,12 -14] Gallium nitride (GaN) and its related alloys such as AlGaN are widely used to manufacture high electron mobility transistors (HEMTs), [2 -4] thanks to physical properties of the material such as wide band gap, [2 -4,6,7] high saturation velocity, [7,10] high breakdown field [1,3,6,7,10] and a high thermal stability. [1,3,4] Considerable efforts to improve performance are made to achieve devices operating at high power and high temperature.…”

Section: Introductionmentioning

confidence: 99%

“…[2,9,12,14] However, problems due to dispersion effects and instabilities remain a challenge for these applications. [9,10,13] Dispersion is attributed to presence of traps in the heterostructure, in particular, at the interface which causes deterioration of d.c. and rf characteristics. [6 -11,15] This work aims at investigating trap effects within such structures.…”

Section: Introductionmentioning

confidence: 99%

“…Capacitance also is affected by charge storage. [6,10] In the present work, measurements of capacitance and conductance versus frequency at different temperatures are analyzed in order to determine the location of existing traps which are thermally activated. [7,9,10,18,19] Measurements were performed on AlGaN/GaN heterostructure with bias voltage maintained at 0 V. Thanks to the conductance method, [17,20] physical characteristics of traps are determined taking into account series resistance ( Fig.…”

Section: Introductionmentioning

confidence: 99%

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Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

Semra

Telia

Soltani³

2010

Surface & Interface Analysis

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An analysis of frequency dispersion in capacitance and conductance of gate-source contact of AlGaN/GaN HEMT was performed. Capacitance and conductance were measured at temperatures varying from 83 K to 370 K with bias voltage maintained at 0 V. In order to characterize trap states the conductance method was used considering series resistance. Hence, the parallel conductance G p and capacitance C p were calculated, and consequently interface trap density D it and time constant t are deduced. The analysis is performed assuming a continuum of levels yielding to a trap density of approximately 10 +12 cm −2 eV −1 and a time constant varying between 1 µs and 3 ms. Activation energies and capture cross sections of three trap levels were deduced and their values were respectively ( E a1 = 0.201 eV, σ n1 = 4.992 × 10 −18 cm 2 ), ( E a2 = 0.053 eV, σ n2 = 2.585 × 10 −21 cm 2 ), ( E a3 = 0.121 eV, σ n3 = 1.256 × 10 −20 cm 2 ). An electrical model was established with two levels of traps at AlGaN/GaN interface and one level located in barrier AlGaN surface.

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“…Note that we assume another trapping center with the activation energy at 1.8 eV in Table I, referring to the reported DLTS measurements in the AlGaN/GaN heterostructures [5]. Results show that the internal potential profile becomes irregular and the NDR characteristics are significantly affected by the trap centers at deeper activation energy.…”

Section: à3mentioning

confidence: 94%

The impact of trapping centers on AlGaN/GaN resonant tunneling diode

Chen

Yang

Liu

et al. 2013

IEICE Electron. Express

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We report on a simulation for aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature by introducing deep-level trapping centers into the polarized AlGaN/GaN/AlGaN quantum well. Theoretical analysis reveals that the degradations of NDR characteristics in GaN based RTDs are actually caused by the combined actions of the activation energy and the trap density. Furthermore, the trapping centers with high activation energy play a dominant role in the degradation of negative differential resistance (NDR) characteristics.

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Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates

Cited by 24 publications

References 27 publications

Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements

Electrical Characterization of Traps in AlGaN/GaN FAT-HEMT’s on Silicon Substrate by C-V and DLTS Measurements

Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

The impact of trapping centers on AlGaN/GaN resonant tunneling diode

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