Traps induced Greens function based mathematical modeling for BaTiO₃–SrTiO₃ gate stack dual metal GAA MOSFET

Abstract

In this paper, an analytical model has been developed to analyze the impact of trap charges on Dual Metal Gate-All-Around (DMGAA) MOSFET with BaTiO 3 -SrTiO 3 epitaxial oxide layer as gate stack using Greens function and conformal mapping. Trap charges have been induced to observe the changes in surface potential, electric field and drain current. To further investigate the impact of trap charges the trap density is varied. This enhances the drain current with high I ON /I OFF ratio. The analytical results so obtained are compared with the simulated data and are in good agreement thus validating the proposed model. It is also proposed that the device can offer high performance, low leakage power along with high gain and is perfect for analog RF applications. It can be concluded that proposed DMGAA MOSFET is a promising device and a suitable replacement for the existing conventional GAA MOSFETs.

Impact of Interface Trap Charges on Silicon Carbide (4H-SiC) Based Gate – Stack, Dual Metal, Surrounding Gate, FET (4H-SiC- GSDM-SGFET) for Analog and Noise Performance Analysis for 5 G/LTE Applications

“…Device simulations have been implemented using ATLAS 3-D device simulator. 23 The standard expressions summarized in table II [23][24][25][26][27][28][29][30][31][32][33][34] for the physical models addressed in this work. In simulation setup mentioned below defect/trap effects are carefully considered in the analysis.…”