TRASIM: compact and efficient two-dimensional transient simulator for arbitrary planar semiconductor devices

Obrecht, M.S.; Elmasry, M.I.; Heasell, E.L.

doi:10.1109/43.372371

Cited by 15 publications

(6 citation statements)

References 16 publications

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“…If not, it should take another iteration. Note that the VCCS is not necessary on the equivalent circuits [4] to describe Equations (5), (7) and (8).…”

Section: Decoupled Methodsmentioning

confidence: 99%

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Simplified equivalent‐circuit modelling for decoupled and partial decoupled methods in semiconductor device simulation

Dai

Chang

Lee

et al. 2004

Int J Numerical Modelling

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SUMMARYIn this paper, we study the decoupled method which requires less memory on semiconductor device simulation. The decoupled method decouples the three equivalent circuits of semiconductor and solves them sequentially. The three equivalent circuits are formed by formulating the three partial differential equations that describe the electrical behaviour of semiconductor. Since the decoupled method solves one equation in each stage, the decoupled method uses one-ninth memory space of the coupled method. When decoupling the three equivalent circuits, the decoupled method yields a boundary condition limitation. In order to overcome the limitation, we propose a compromising partial decoupled method which has complete boundary condition and requires four-ninth memory space of the coupled method. The three methods are compared for computational efficiency and accuracy in the simulation of BJT. The simulation results are identical.

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“…If not, it should take another iteration. Note that the VCCS is not necessary on the equivalent circuits [4] to describe Equations (5), (7) and (8).…”

Section: Decoupled Methodsmentioning

confidence: 99%

“…As operating current increases, DM and PDM use increasing CPU time to solve. There is room for speeding up the convergence of decoupled method [6,7]. It is difficult to decide which method is superior.…”

Section: Mixed Level Simulation With Pdm and CMmentioning

confidence: 99%

Simplified equivalent‐circuit modelling for decoupled and partial decoupled methods in semiconductor device simulation

Dai

Chang

Lee

et al. 2004

Int J Numerical Modelling

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“…If we employed the fully explicit scheme into (5.2), then we have the differential form of the carrier continuity equation where n' and /"' are the carrier density and current density at time level (t), respectively. To avoid the nonconservation of charge during the transient state, the potential distribution should be corrected at each time step by solving the Poisson equation [38]. Thus, after obtaining a solution of one of the time-dependent hydrodynamic balance equations, a procedure to correct the Poisson equation is necessary to ascertain a selfconsistent solution.…”

Section: The Numerical Methods For the Transient Problemmentioning

confidence: 99%

Quantum Mechanical Balance Equation Approach to Semiconductor Device Simulation

Cui¹

1997

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Public reporting burden for this collection of information * estimated to average 1 hour per response, including the time for reviewing «utructtoni, searching existing data sources, gathering and maintaining the data needed, and compleung and reviewing the collection of information. Send comment regarding «is burden estsnates or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for information Operations Hong-Liang Cui Department of Physics and Engineering PhysicsPerformance Period:October 1,1994 -September 30,1997Contract Number: DAAH04-94-G-0413 a 2 December 1997 IntroductionIt is becoming increasingly important to use computer-aided device simulators in the design and fabrication processes of semiconductor devices designing as semiconductor devices continue to decrease in size toward the deep submicron regime. The development of devices involves several iterations of trial and error in fabrication until a specified goal in terms of design conditions is reached. The application of device modeling can provide an inexpensive way to analyze and design the semiconductor devices before expensive device processing. Since traditional equivalent circuit models and close-form analytical models cannot always provide consistently accurate results for all modes of operation of today's small devices. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results.To simulate a device, we solve a transport equation coupled with Poisson equation The accuracy of a simulation is usually determined by how accurately carrier transport is described. Generally, the more sophisticated the approach, the heavier the computational burden, so it is important to choose an adequate approach for the device under study. In the past, the study of electric behavior in a semiconductor device has been based on the drift-diffusion equation. The drift-diffusion model is a low-order approximation of the Boltzmann transport equation, it implies that mobility of the carrier is only a function of the local electrical field and it does not take account of the non-stationary characteristics such as carrier heating and velocity overshoot [1,2]. The application of this model is limited to devices where the spatial variation of the electric field is not very large. However, in modern devices, whose size is in the deep submicron region, the nonstationary phenomena are becoming more important. As a result, the drift-diffusion model is no longer applicable [3][4][5][6].Monte Carlo simulation has been widely used for analyzing carrier transport in bulk semiconductors [7,8,9]. This method tracks the momentum and position of an ensemble of carriers as they move through a device under the influence of an electric field and random scattering forces. Random numbers are chosen to determine the time between collisions, the type of scattering ev...

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“…The algorithms used in this simulator are described in detail in ref. 15 The physical model is based on the bipolar diffusion-drift system of equations with no hydrodynamic or other non-local effects taken into account…”

Section: Introductionmentioning

confidence: 99%

Simplified Surface Reaction Model of SF₆/CHF₃Plasma Etching of SiN Film

Iwakoshi¹,

Aoyama²,

Nara³

et al. 2009

Jpn. J. Appl. Phys.

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We present results of a two-demensional (2D) numerical simulation of high-frequency noise in a short-channel metal-oxidesemiconductor field-effect transistors (MOSFET). Conventionally this noise in MOSFETs is treated as a thermal noise with a rather slow temperature dependence of the noise spectra. On contrary, the results obtained indicate that this dependence is more of an exponential kind, typical for a shot noise. Shot noise is conventionally related to a forward biased p-n junction where the current is mostly due to diffusion in the quasi-neutral region. We therefore speculate that most likely in short channel MOSFETs most of the high-frequency noise is produced not in the cut-off region of the channel but near the source side of the channel where diffusion current component is dominant.

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TRASIM: compact and efficient two-dimensional transient simulator for arbitrary planar semiconductor devices

Cited by 15 publications

References 16 publications

Simplified equivalent‐circuit modelling for decoupled and partial decoupled methods in semiconductor device simulation

Simplified equivalent‐circuit modelling for decoupled and partial decoupled methods in semiconductor device simulation

Quantum Mechanical Balance Equation Approach to Semiconductor Device Simulation

Simplified Surface Reaction Model of SF₆/CHF₃Plasma Etching of SiN Film

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TRASIM: compact and efficient two-dimensional transient simulator for arbitrary planar semiconductor devices

Cited by 15 publications

References 16 publications

Simplified equivalent‐circuit modelling for decoupled and partial decoupled methods in semiconductor device simulation

Simplified equivalent‐circuit modelling for decoupled and partial decoupled methods in semiconductor device simulation

Quantum Mechanical Balance Equation Approach to Semiconductor Device Simulation

Simplified Surface Reaction Model of SF6/CHF3Plasma Etching of SiN Film

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Product

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Simplified Surface Reaction Model of SF₆/CHF₃Plasma Etching of SiN Film