The temperature dependence of the radiative recombination zone in InGaN/GaN multiple quantum well light-emitting diodes is investigated. From the electroluminescence spectra measured at various temperatures, it is found that there are two peaks at about 400 and 460 nm, which can be assigned as Mg-related and quantum well transitions, respectively. The behavior of these two peaks with temperature is modeled by the two rate equation. Based on this model, we deduce the activation energy of Mg in GaN films to be about 126 meV, which is consistent with reported results obtained by other techniques.

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SUMMARYIn this paper, we study the decoupled method which requires less memory on semiconductor device simulation. The decoupled method decouples the three equivalent circuits of semiconductor and solves them sequentially. The three equivalent circuits are formed by formulating the three partial differential equations that describe the electrical behaviour of semiconductor. Since the decoupled method solves one equation in each stage, the decoupled method uses one-ninth memory space of the coupled method. When decoupling the three equivalent circuits, the decoupled method yields a boundary condition limitation. In order to overcome the limitation, we propose a compromising partial decoupled method which has complete boundary condition and requires four-ninth memory space of the coupled method. The three methods are compared for computational efficiency and accuracy in the simulation of BJT. The simulation results are identical.

In this paper, we study on a 1D BJT model, which saves the memory size and computation time and verify that the characteristic of 1D BJT model is in good agreement with 2D BJT model. We use the equivalent circuit approach to simulate the BJT device. Poisson's equation and continuity equations for electron and hole are formulated into a subcircuit format suitable for general circuit simulator in the equivalent circuit approach. In order to solve the 2D device simulation, the simulation environment needs a powerful solver. So we use the band matrix solver to replace the full matrix solver. But the 2D BJT simulation still needs a large computation time, so we must develop the efficient 1D BJT model. In 1D BJT simulation, we have overcome the base boundary condition and verified that the base boundary conditions in 1D BJT model closely approach to that in 2D BJT model. Finally, we apply it to two applications and study the operation concepts of these applications. Copyright © 2002 John Wiley & Sons, Ltd.