Verification of 1D BJT numerical simulation and its application to mixed‐level device and circuit simulation

Abstract

In this paper, we study on a 1D BJT model, which saves the memory size and computation time and verify that the characteristic of 1D BJT model is in good agreement with 2D BJT model. We use the equivalent circuit approach to simulate the BJT device. Poisson's equation and continuity equations for electron and hole are formulated into a subcircuit format suitable for general circuit simulator in the equivalent circuit approach. In order to solve the 2D device simulation, the simulation environment needs a powerful solver. So we use the band matrix solver to replace the full matrix solver. But the 2D BJT simulation still needs a large computation time, so we must develop the efficient 1D BJT model. In 1D BJT simulation, we have overcome the base boundary condition and verified that the base boundary conditions in 1D BJT model closely approach to that in 2D BJT model. Finally, we apply it to two applications and study the operation concepts of these applications. Copyright © 2002 John Wiley & Sons, Ltd.

Simplified equivalent‐circuit modelling for decoupled and partial decoupled methods in semiconductor device simulation

“…In DM, we met a boundary problem which failed to use current source as a boundary condition and not applicable in mixed level simulation. Since the mixed-level device and circuit simulation is an important topic that is extensively discussed in the simulation of integrated circuits [3][4][5], we propose a compromising method PDM which has complete boundary condition. These algorithms were compared by simulating NPN BJT.…”