We present broadband parametric amplifiers based on the kinetic inductance of superconducting NbTiN thin films in an artificial (lumped-element) transmission line architecture. We demonstrate two amplifier designs implementing different phase matching techniques: periodic impedance loading, and resonator phase shifters placed periodically along the transmission line. Our design offers several advantages over previous CPW-based amplifiers, including intrinsic 50 ohm characteristic impedance, natural suppression of higher pump harmonics, lower required pump power, and shorter total trace length. Experimental realizations of both versions of the amplifiers are demonstrated. With a transmission line length of 20 cm, we have achieved gains of 15 dB over several GHz of bandwidth.Cryogenic low-noise broadband amplifiers are critical for a variety of applications, such as the multiplexed readout of astronomical detectors [1][2][3] and superconducting qubits [4][5][6], the manipulation of mechanical resonators coupled to microwave cavities [7], and the study of nonclassical states of microwave light [8,9]. These experiments often use high electron mobility transistor (HEMT) amplifiers, which typically have a noise temperature of 2-5 K in the 4-8 GHz range [10]. This noise is 10-40 times above the standard quantum limit, the fundamental limit imposed by quantum mechanics [11].Over the last decade, there has been rapid development of quantum-limited microwave amplifiers, including particularly Josephson parametric amplifiers (JPAs) [12][13][14]. JPAs use the dissipationless nonlinearity of Josephson junctions in a parametric process to achieve gain. Both narrowband JPAs, based on junction-embedded resonant architectures, and broadband JPAs, based on junction-embedded transmission lines, have been developed and have demonstrated near quantum-limited noise performance [15,16]. However, the ∼ 10 µA critical current of the junctions limits the dynamic range of these devices and excludes them from some important applications, such as the multiplexed readout of thousands of qubits or detectors. In addition, fabricating a large number (> 1000) of junctions with high yield is a nontrivial task.Recently, another type of broadband parametric amplifier based on the nonlinear kinetic inductance of NbTiN transmission lines has been proposed [17,18,[20][21][22]. These devices are simple to fabricate, requiring only one lithography step (patterning of the NbTiN film). Due to the 1 mA critical currents of the films, the amplifier saturation power is 5-6 orders of magnitude higher than JPAs, making them promising for readout of a large array of detectors or qubits. In contrast with reflectiontype resonant JPAs, the traveling-wave architecture of the NbTiN amplifier eliminates the need for a circulator, enabling on-chip integration with a detector or qubit. In previous work, NbTiN amplifiers were realized as long coplanar waveguide (CPW) transmission lines, with >20 dB gain over several GHz bandwidth [18]. Despite the excellent gain perform...