Trench edge termination in a GaN-based power device

Krishna, D. Vamshi; Panchal, Ankit; Sharma, Ekta; Dalal, Sudhir

doi:10.1016/j.matpr.2022.10.076

Cited by 2 publications

(3 citation statements)

References 29 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[ [23][24][25][26][27]. The combination of trench metal-insulator-semiconductor (MIS) and FP structures can effectively suppress the electric field at the isolation edge of a vertical device [28][29][30][31].…”

Section: Device Structurementioning

confidence: 99%

“…Moreover, p-type ion implantation requires high-temperature annealing to activate the dopants and heal the damage to the crystal structure, which poses challenges for GaN due to its low thermal stability and high thermal stress. As a result, FP or trench FP structures, rather than ion implantation-based techniques, have been employed for the edge termination of GaN power devices due to the lack of technological maturity [23][24][25][26][27]. The combination of trench metal-insulator-semiconductor (MIS) and FP structures can effectively suppress the electric field at the isolation edge of a vertical device [28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode

Lee,

Cha

2023

Micromachines

View full text Add to dashboard Cite

In this study, we developed an analytic model to design a trench metal–insulator–semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN diode. The key parameters considered in the trench MIS FP structure include trench depth, MIS dielectric material and thickness, and interface charge density of MIS. The boundary conditions are defined based on the maximum allowed electric field strengths at the dielectric and semiconductor regions. The developed model was validated using TCAD simulations. As an example, a 1 kV GaN vertical PN diode was designed using the optimized FP structure, which exhibited the same breakdown voltage characteristics as an ideal one-dimensional PN diode structure without edge effects. This proposed simple analytic model offers a design guideline for the trench MIS FP for the edge termination of vertical PN diodes, enabling efficient design without the need for extensive TCAD simulations, thus saving significant time and effort.

show abstract

Section: Device Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode

Lee,

Cha

2023

Micromachines

View full text Add to dashboard Cite

show abstract

“…In order to overcome these problems, a new GaN vertical device architecture has emerged as an alternative solution to this planar technology [9]. This new device architecture allows for better electric field distribution, keeping it confined to the volume of the GaN far from the device surface, thanks to the guard-ring approach [15]. Additionally, the vertical structure is more suitable for efficiently dissipating heat generated during device operation [16].…”

Section: Introductionmentioning

confidence: 99%

Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications

Benjelloun¹,

Zaidan²,

Soltani³

et al. 2023

IEEE Access

View full text Add to dashboard Cite

A new vertical transistor structure based on GaN nanowire is designed and optimized using the TCAD-Santaurus tool with an electrothermal model. The studied structure with quasi-1D drift region is adapted to GaN nanowires synthesized with the bottom-up approach on a highly n-doped silicon substrate. The electrical performance is studied as a function of various epi-structure parameters, including region lengths and doping levels, nanowire diameter, and the impact of the surface states. The results reveal that the optimized structure has a Normally-OFF mode with a threshold voltage higher than 0.8 V and exhibits minimized leakage current, low on-state resistance, and maximized breakdown voltage. To the best of our knowledge, this is the first exhaustive study of GaN-based nanowire transistors, providing valuable insights for the scientific community and contributing to a deeper understanding of the impact of GaN nanowire parameters on device performance.

show abstract

Trench edge termination in a GaN-based power device

Cited by 2 publications

References 29 publications

Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode

Design of Trench MIS Field Plate Structure for Edge Termination of GaN Vertical PN Diode

Design, Simulation and Optimization of an Enhanced Vertical GaN Nanowire Transistor on Silicon Substrate for Power Electronic Applications

Contact Info

Product

Resources

About