Trench shielded gate concept for improved switching performance with the low miller capacitance

Sawada, M.; Ohi, Kota; Ikura, Yoshihiro; Onozawa, Yuichi; Otsuki, M.; Nabetani, Yoichi

doi:10.1109/ispsd.2016.7520814

Cited by 22 publications

(14 citation statements)

References 5 publications

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“…There is a tight trade-off relationship between E on and turn-on dv/dt, which is related to C ge , or between V CEsat and the dv/dt. Hence the improvement of the trade-off generally requires complexities from the structural and wafer process points of view [40][41][42][43][44][45][46][47][48]. In the turn-off period, it is also inevitable to face almost same situations in order to obtain waveforms with lower di/dt or less surge voltage [40,44,45,48].…”

Section: Improving Usabilitymentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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From the power loss reduction and safety operation points of view, the direction of power device developments is simply one-way. However, from the application point of view, the direction is wide-ranging. There are a variety of requirements to be considered, such as switching waveforms, operational environments including not only the temperature range but also the combination of the humidity, the cosmic ray endurance, the package compactness and so on. In this study, several efforts are explained as the latest technologies.

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Section: Improving Usabilitymentioning

confidence: 99%

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Honda

Minato

Shimizu

et al. 2019

IET Power Electronics

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show abstract

“…Different approaches have been suggested in the literature (e.g. [7][8][9][10][11][12][13]). A very promising approach is the MPT concept with sub-µm mesa widths to increase the carrier confinement and increased channel width to further lower the on-state voltage.…”

Section: Advanced Concepts For Power-loss Reductionmentioning

confidence: 99%

Progress in IGBT development

Niedernostheide

Schulze

Laska

et al. 2018

IET Power Electronics

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Recent progress in insulated gate bipolar transistor (IGBT) development is reviewed. Highlighted issues range from technological aspects such as special processes suitable for thin-wafer-processing, through the advanced cell and vertical concepts to approaches for improved IGBT ruggedness. Latest advancements regarding thermal management in both modules and discrete chips are also addressed. (a) Turn-off transients of a 15 A-1200 V-IGBT with an FS layer created by a threestage proton implantation (T = 125°C), (b) Maximum DC-link voltage V DC,max at which the IGBT can be turned off softly

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“…where C GC(OX) is the gate oxide component of C GC and V GE is the gate-to-emitter voltage [1][2][3][4][5][6][7][8]. Clearly, C GC(OX) has the same value in the proposed TIGBT and the conventional one.…”

mentioning

confidence: 99%

“…The EMI noise, which is triggered by the high dV/dt or high dI/dt in the circuit loop, and the turn-on loss are strongly determined by the turn-on characteristics of TIGBTs [1]. In order to improve the characteristics, many efforts have been focused on the reduction of the miller capacitance (C GC ) [1][2][3][4]. However, too small C GC would cause a high dV/dt noise especially when the free-wheeling diode (FWD) operates at a small current [5].…”

mentioning

confidence: 99%

TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

Cheng

Chen

2018

Electron. lett.

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A trench insulated gate bipolar transistor (TIGBT) with emitterembedded gate is proposed. The emitter-embedded gate could increase the gate-to-emitter capacitance C GE without affecting the miller capacitance C GC. Therefore, the ratio of C GC to C GE is significantly reduced, which suppresses the gate self-charging effect effectively. As a result, an excellent controllability on the turn-on dI CE /dt of the TIGBT and the dV KA /dt of the freewheeling diode (FWD) is obtained. The simulation results based on a 1.2 kV TIGBT show that, in comparison with the conventional TIGBT, the lower limit of the reverse-recovery dV KA /dt of the FWD can be reduced by 91.2% and the turn-on loss could be reduced by 53.1% under the same dV KA /dt.

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Trench shielded gate concept for improved switching performance with the low miller capacitance

Cited by 22 publications

References 5 publications

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Multidirectional development of IGBTs and diodes: low loss and tough but gentle (user‐friendly) power devices

Progress in IGBT development

TIGBT with emitter‐embedded gate for low turn‐on loss and low electro‐magnetic interference noise

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