Trends in metal oxide thin films: Synthesis and applications of tin oxide

Aguir, Khalifa; Lawson, Bruno; Fiorido, Tomas

doi:10.1016/b978-0-12-815924-8.00008-6

Cited by 11 publications

(9 citation statements)

References 68 publications

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“…Similar to Ga 2 O 3 , SnO 2 is an interesting semiconductor and is quite important for electronic and optoelectronic applications. With a band gap energy of 3.6 eV, n -type semiconducting SnO 2 has been explored widely for utilization in transparent conductive electronics and integrated chemical sensors. − The ability to respond selectively to both oxidizing and reducing gases makes SnO 2 materials suitable for the design and development of novel sensors. ,, Therefore, incorporating Sn into Ga 2 O 3 and understanding the fundamental aspects of the resulting compounds and their physical/chemical/electronic properties are beneficial not only from a fundamental science perspective but also to derive new properties and phenomena, which can facilitate designing materials for advanced electronics and energy-related applications.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Phase Modulation-Induced Structural Distortion, Band Gap Reduction, and Nonlinear Optical Activity in Tin-Incorporated Ga₂O₃

et al. 2021

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We report the structural chemistry and optical properties of tin (Sn)mixed gallium oxide (Ga 2 O 3 ) compounds, where the interfacial phase modulationinduced structural distortion in turn induces variations in the band gap and nonlinear optical activity. The Sn incorporation into Ga 2 O 3 causes significant reduction in the band gap and induces nonlinear optical activity upon chemical composition tuning. Detailed investigation performed on the structural chemistry, phase stabilization, surface morphology, and optical and electrochemical properties of Sn-mixed Ga 2 O 3 compounds (Ga 2−2x Sn x O 3 , 0.00 ≤ x ≤ 0.3, Ga-Sn-O) indicates that the Sn-incorporation-induced effects are significant. To produce Ga-Sn-O materials of high structural and chemical quality, we adopted a simple solid-state chemical reaction route involving first calcining and then sintering the material at higher temperatures. Structural chemistry analyses of sintered Ga-Sn-O compounds by X-ray diffraction (XRD) showed solid solution formation at lower Sn concentrations (x ≤ 0.10). The XRD analyses indicate the SnO 2 secondary phase formation at higher (x > 0.10) Sn concentrations. Surface morphology analysis using scanning electron microscopy (SEM) also showed a positive relationship between phase separation and Sn concentration. Optical absorption spectra showed a substantial redshift in the band gap (E g ), which would allow Ga-Sn-O compounds to have wide spectral selectivity. At higher Sn concentrations (x = 0.25−0.30), corroborating with structural/chemical analyses, an additional lower-energy sub-band transition that explicitly corresponds to SnO 2 appears in the optical absorption data. Importantly, the evidence of nonlinear optical activity in Ga-Sn-O, which is otherwise not traditionally known for such an activity, as well as dipolar-and quadrupolar-shaped dependence of activity with the polarization angle of the excitation source was detected. At higher concentrations (x ≥ 0.15), Sn was found to be insoluble, which can be attributed to Ga 2 O 3 and SnO 2 possessing different formation enthalpies and cation (Ga 3+ and Sn 4+ ) chemistries. The fundamental scientific understanding of the interdependence of synthetic conditions, structure, chemistry, and optical and electrochemical properties could be useful to optimize Ga-Sn-O inorganic compounds for optical, optoelectronic, and photocatalytic device applications.

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Section: Introductionmentioning

confidence: 99%

Interfacial Phase Modulation-Induced Structural Distortion, Band Gap Reduction, and Nonlinear Optical Activity in Tin-Incorporated Ga₂O₃

et al. 2021

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“…In addition, light activation is also very useful to optimize the sensor selectivity and response-recovery speed. This topic has been recently discussed in some reviews and book chapters [21][22][23]. Here, we will summarize the most recent advances obtained in light-activated RT MOS sensors within the past few years.…”

Section: Introductionmentioning

confidence: 98%

Room-Temperature Gas Sensors Under Photoactivation: From Metal Oxides to 2D Materials

et al. 2020

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Room-temperature gas sensors have aroused great attention in current gas sensor technology because of deemed demand of cheap, low power consumption and portable sensors for rapidly growing Internet of things applications. As an important approach, light illumination has been exploited for room-temperature operation with improving gas sensor’s attributes including sensitivity, speed and selectivity. This review provides an overview of the utilization of photoactivated nanomaterials in gas sensing field. First, recent advances in gas sensing of some exciting different nanostructures and hybrids of metal oxide semiconductors under light illumination are highlighted. Later, excellent gas sensing performance of emerging two-dimensional materials-based sensors under light illumination is discussed in details with proposed gas sensing mechanism. Originated impressive features from the interaction of photons with sensing materials are elucidated in the context of modulating sensing characteristics. Finally, the review concludes with key and constructive insights into current and future perspectives in the light-activated nanomaterials for optoelectronic gas sensor applications.

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“…Transparent conductive oxides (TCO) are a group of metal oxides (In 2 O 3 , ZnO, SnO 2 , CdO, GaInO 3 , CdSb 2 O 3 , etc.) that have appropriate optical and electrical properties [ 1 , 2 ]. They have wide optical band gaps and are transparent in the visible part of the electromagnetic spectrum, and it is common practice to influence their electrical conductivity by doping with metal(Sb, Nb, Sr, W, Ta, La, Li, Ga) and non-metal atoms (F, P, Mo, Co, etc.)…”

Section: Introductionmentioning

confidence: 99%

“…In the form of thin films, they can be prepared by various chemical and physical methods. The most commonly used are: magnetron sputtering, spray pyrolysis, sol-gel, thermal or electron-beam evaporation, pulsed laser deposition, hydrothermal processing, spin coating, drop coating, deep coating, screen printing, atomic layer deposition [ 1 ].…”

Section: Introductionmentioning

confidence: 99%

Surface Morphology of Textured Transparent Conductive Oxide Thin Film Seen by Various Probes: Visible Light, X-rays, Electron Scattering and Contact Probe

et al. 2022

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Fluorine-doped tin oxide thin films (SnO2:F) are widely used as transparent conductive oxide electrodes in thin-film solar cells because of their appropriate electrical and optical properties. The surface morphology of these films influences their optical properties and therefore plays an important role in the overall efficiencies of the solar cells in which they are implemented. At rough surfaces light is diffusely scattered, extending the optical path of light inside the active layer of the solar cell, which in term improves light absorption and solar cell conversion efficiency. In this work, we investigated the surface morphology of undoped and doped SnO2 thin films and their influence on the optical properties of the films. We have compared and analysed the results obtained by several complementary methods for thin-film surface morphology investigation: atomic force microscopy (AFM), transmission electron microscopy (TEM), and grazing-incidence small-angle X-ray scattering (GISAXS). Based on the AFM and TEM results we propose a theoretical model that reproduces well the GISAXS scattering patterns.

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Trends in metal oxide thin films: Synthesis and applications of tin oxide

Cited by 11 publications

References 68 publications

Interfacial Phase Modulation-Induced Structural Distortion, Band Gap Reduction, and Nonlinear Optical Activity in Tin-Incorporated Ga₂O₃

Interfacial Phase Modulation-Induced Structural Distortion, Band Gap Reduction, and Nonlinear Optical Activity in Tin-Incorporated Ga₂O₃

Room-Temperature Gas Sensors Under Photoactivation: From Metal Oxides to 2D Materials

Surface Morphology of Textured Transparent Conductive Oxide Thin Film Seen by Various Probes: Visible Light, X-rays, Electron Scattering and Contact Probe

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Trends in metal oxide thin films: Synthesis and applications of tin oxide

Cited by 11 publications

References 68 publications

Interfacial Phase Modulation-Induced Structural Distortion, Band Gap Reduction, and Nonlinear Optical Activity in Tin-Incorporated Ga2O3

Interfacial Phase Modulation-Induced Structural Distortion, Band Gap Reduction, and Nonlinear Optical Activity in Tin-Incorporated Ga2O3

Room-Temperature Gas Sensors Under Photoactivation: From Metal Oxides to 2D Materials

Surface Morphology of Textured Transparent Conductive Oxide Thin Film Seen by Various Probes: Visible Light, X-rays, Electron Scattering and Contact Probe

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Interfacial Phase Modulation-Induced Structural Distortion, Band Gap Reduction, and Nonlinear Optical Activity in Tin-Incorporated Ga₂O₃

Interfacial Phase Modulation-Induced Structural Distortion, Band Gap Reduction, and Nonlinear Optical Activity in Tin-Incorporated Ga₂O₃