Tri-isopropyl gallium: A very promising precursor for chemical beam epitaxy

Lane, P.A.; Martin, Trevor; Freer, R.W.; Calcott, P. D. J.; Whitehouse, C. R.; Jones, Anthony; Rushworth, S.

doi:10.1063/1.107939

Cited by 35 publications

(7 citation statements)

References 15 publications

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“…The growth temperature was calibrated by using the melting points of InSb and bismuth. Here, TIPGa was used for the QD and InGaAs-layer growth because its decomposition temperature is lower than that of TEGa [35]. Growth sequence for the QD samples was as follows.…”

Section: Experimental Methodsmentioning

confidence: 99%

Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth

Okamoto¹

2016

JAN

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III-V and group IV semiconductor nanostructures such as quantum dots (QDs) are expected for various applications. In this study, effects of Bi supply during the deposition process on the self-organized nanostructure formation were examined for III-V and group IV semiconductor materials. It was found that Bi was successfully acted as a surfactant to form In(Ga)As QDs by MOVPE growth. By this method, QDs with superior optical quality were obtained. The unique features, such as ripening during the In(Ga)As QD formation and the phenomenon during the covering layer growth are discussed. As for the new approach on Ge-based nanostructure formation, high-density dot-like nanostructures were obtained by the low-temperature deposition sequence of Bi and Ge on SiO 2 substrates. As the formation mechanism has not been revealed yet, we suggest hypotheses for that of the Bi and Ge system.

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Section: Experimental Methodsmentioning

confidence: 99%

Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth

Okamoto¹

2016

JAN

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“…Here, TIPGa was used for QD and QW growth because its decomposition temperature is lower than that of TEGa. 32) The samples studied here were 10-layer QDs with a layer structure for the laser diode (p-i-n junction) and reference undoped 10-layer QDs. Here, both samples include In 0.12 -Ga 0.88 As strain-reducing layers (SRLs) [33][34][35] and GaAs 0.72 -P 0.28 strain-compensation layers (SCLs).…”

Section: Methodsmentioning

confidence: 99%

Deep-level transient spectroscopy characterization of In(Ga)As quantum dots fabricated using Bi as a surfactant

Okamoto

Suzuki

Narita

et al. 2014

Jpn. J. Appl. Phys.

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The 12 CO J = 4 → 3 to J = 13 → 12 lines of the interstellar medium from nearby galaxies, newly observable with the Herschel SPIRE Fourier transform spectrometer, offer an opportunity to study warmer, more luminous molecular gas than that traced by 12 CO J = 1 → 0. Here we present a survey of 17 nearby infrared-luminous galaxy systems (21 pointings). In addition to photometric modeling of dust, we modeled full 12 CO spectral line energy distributions from J = 1 → 0 to J = 13 → 12 with two components of warm and cool CO gas, and included LTE analysis of, and H 2 lines. CO is emitted from a low-pressure/high-mass component traced by the low-J lines and a high-pressure/low-mass component that dominates the luminosity. We found that, on average, the ratios of the warm/cool pressure, mass, and 12 CO luminosity are 60 ± 30, 0.11 ± 0.02, and 15.6 ± 2.7. The gas-to-dust-mass ratios are <120 throughout the sample. The 12 CO luminosity is dominated by the high-J lines and is 4 × 10 −4 L FIR on average. We discuss systematic effects of single-component and multi-component CO modeling (e.g., single-component J 3 models overestimate gas pressure by ∼0.5 dex), as well as compare to Galactic star-forming regions. With this comparison, we show the molecular interstellar medium of starburst galaxies is not simply an ensemble of Galactic-type giant molecular clouds. The warm gas emission is likely dominated by regions resembling the warm extended cloud of Sgr B2.

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“…Other gallium sources have been investigated, such as isopropyl gallium [80,81] and gallane (Ga 2 H 6 ) based adduct compounds [82][83][84]. The adduct compounds stabilize the gallane from rapid decomposition at room temperature.…”

Section: Gallium Sourcesmentioning

confidence: 99%

Metal Organic Vapor Phase Epitaxy Chemical Kinetics

Kuech

2015

Handbook of Crystal Growth

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Tri-isopropyl gallium: A very promising precursor for chemical beam epitaxy

Cited by 35 publications

References 15 publications

Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth

Self-Organized Nanostructure Formation of III-V and IV Semiconductors with Bismuth

Deep-level transient spectroscopy characterization of In(Ga)As quantum dots fabricated using Bi as a surfactant

Metal Organic Vapor Phase Epitaxy Chemical Kinetics

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