The objective of the current work was to establish the degree to which the effects of carbon and nitrogen availability on Arabidopsis seedling growth and development are due to these nutrients acting independently or together. Growth of seedlings on low (0.1 mM) nitrogen results in a significant reduction of seedling and cotyledon size, fresh weight, chlorophyll, and anthocyanin content but a slight increase in endogenous sugars. The addition of 100 mM sucrose (Suc) to the nitrogen-depleted growth media results in a further reduction in cotyledon size and chlorophyll content and an overall increase in anthocyanins and endogenous sugars. Storage lipid breakdown is almost completely blocked in seedlings grown on low nitrogen and 100 mM Suc and is significantly inhibited when seedlings are grown on either low nitrogen or high Suc. Carbohydrate repression of photosynthetic gene expression can only be observed under low nitrogen conditions. Low (0.1 mM) nitrogen in the absence of exogenous carbohydrate results in a significant decrease in chlorophyll a/b-binding protein and ribulose bisphosphate carboxylase small subunit gene transcript levels. Thus, carbon to nitrogen ratio rather than carbohydrate status alone appears to play the predominant role in regulating various aspects of seedling growth including storage reserve mobilization and photosynthetic gene expression.

We demonstrate for the first time 85nm gate length enhancement and depletion mode InSb quantum well transistors with unity gain cutoff frequency, f T , of 305 GHz and 256 GHz, respectively, at 0.5V V DS , suitable for high speed, very low power logic applications. The InSb transistors demonstrate 50% higher unity gain cutoff frequency, f T , than silicon NMOS transistors while consuming 10 times less active power.

This paper describes for the first time, a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure. The InSb p-channel QW device structure, grown using solid source MBE, demonstrates a high hole mobility of 1,230cm 2 /V-s. The shortest 40nm gate length (L G ) transistors achieve peak transconductance (G m ) of 510μS/μm and cut-off frequency (f T ) of 140GHz at supply voltage of 0.5V. These represent the highest G m and f T ever reported for III-V p-channel FETs. In addition, effective hole velocity of this device has been measured and compared to that of the standard strained Si p-channel MOSFET. IntroductionThe III-V compound semiconductor quantum-well field effect transistor (QWFET) is one of the most promising device candidates for future high-speed, low-power logic applications due to its high electron mobility. Recently, highperformance III-V n-channel QWFETs have been demonstrated [1][2][3][4]. However, for implementation of CMOS logic, there is a significant challenge of identifying high mobility III-V p-channel candidates [5]. In this work, we demonstrate for the first time a high-speed and low-power III-V p-channel QWFET using a compressively strained InSb QW structure, which achieves cut-off frequency (f T ) of 140GHz at transistor gate length (L G ) of 40nm and supply voltage (V CC ) of 0.5V. This represents the highest f T ever reported for III-V p-channel FETs.