Articles you may be interested inResolution-limiting factors in low-energy electron-beam proximity projection lithography: Mask, projection, and resist process Low energy electron-beam proximity projection lithography: Discovery of a missing link Chrome on glass mask writing at 75 kV with the IBM EL4+electron-beam system A mask electron-beam writer for production lines beyond 100 nm was developed. The system HL-7000M is equipped with cell projection function for high critical dimension accuracy. The newly developed technologies are a cell projection optics, objective lens optics, a low distortion stage, a highly accurate control electronics, and high accuracy proximity effect correction hardware. This article describes the details of the electron optics and its performances.