Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

Liu, W. H.; Pey, K. L.; Raghavan, Nagarajan; Wu, Xihu; Bosman, Michel

doi:10.1063/1.3676255

Cited by 4 publications

(2 citation statements)

References 15 publications

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“…It is clear that digital fluctuations are triggered at a stress voltage of V TRIG ~ 1.6V. These results have been confirmed by Liu et al[90].…”

supporting

confidence: 77%

“…The measurement of digital-BD fluctuations is important for characterizing traps in gate dielectrics. Digital-like fluctuations in I g or random telegraph noise is directly correlated to stress-induced traps/defects generated in the dielectrics [90]. Moreover, digital-BD fluctuation is believed to affect the performance stability and reliability of devices, thus presenting a challenge for the scaling of the high-κ metal gate stacks in the future [91].…”

Section: Importance Of Digital Breakdownmentioning

confidence: 99%

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Nanoscale characterization of resistive switching phenomena in HFO2-based stacks using transmission electron microscopy and atomistic simulation

Wu¹

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This thesis presents a comprehensive study combining electrical characterization, physical analysis, and atomistic simulation on the mechanism of resistive switching. The metal-insulator-semiconductor (MIS) stack based on conventional transistor was used in this study as an effective test structure to understand the chemical origin of switching behavior in the metal-insulator-metal (MIM) stack. The objective of this thesis is to understand the fundamental mechanism governing the nucleation and rupture of the nanosized conductive filaments in resistive random-access memory (RRAM). To study the chemistry of the localized nanoscale conductive path, electrical characterization techniques were employed to pinpoint the location of the conductive path, then advanced nanoscale analysis tools such as transmission electron microscopy (TEM) along with electron energy loss spectroscopy (EELS) were used to study the elemental composition of the conductive path; finally first-principles calculations were used to further understand the band structure change of the switching material. It is found that the conductive filament consists of oxygen vacancies and the metal filament. There are two stages for the formation of the conductive filament: the initial stage, which is commonly referred to as the soft breakdown stage in MIS gate stack reliability study where the oxygen vacancies are the physical defects responsible for the formation of a percolation path; In the second stage, the metal atoms from the top gate electrode migrate along the oxygen deficient breakdown path driven by the high current density and temperature enhanced metal atom diffusion, forming a metal-rich filament at the central core of the breakdown spot. For the ruptured conductive filament, our physical analysis II results show that metal fragments still remain in the dielectric even after the conductive filaments have been electrically switched-off. It is very likely that the residual metal in the dielectric bonds with the O 2ions forming an insulator. The direct visualization of the time evolution of uncorrelated multiple conductive filaments in ultra-thin HfO 2-based high- dielectric resistive switching device is reported using advanced in-situ TEM for the first time. The locations of the multiple filaments were found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments provides a fundamental understanding of the switching mechanism in ultra-thin oxide films and paves a way for investigations into improving the stability and scalability of RRAM for future sub-10nm technology nodes. III ACKNOWLEDGEMENT First of all, I would like to thank my supervisor Professor Pey Kin Leong, for his valuable guidance, patience and constant encouragement. From the start of my graduate course till the submission of this dissertation, Prof. Pey has been inspirational and the role model of a hardworking and creative researcher. I consider myself privileged to have the opportunity to work with such an outstanding...

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“…It is clear that digital fluctuations are triggered at a stress voltage of V TRIG ~ 1.6V. These results have been confirmed by Liu et al[90].…”

supporting

confidence: 77%

Section: Importance Of Digital Breakdownmentioning

confidence: 99%

Nanoscale characterization of resistive switching phenomena in HFO2-based stacks using transmission electron microscopy and atomistic simulation

Wu¹

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Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

Zanotti

Wang

et al. 2021

Adv Funct Materials

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Some memristors with metal/insulator/metal (MIM) structure have exhibited random telegraph noise (RTN) current signals, which makes them ideal to build true random number generators (TRNG) for advanced data encryption. However, there is still no clear guide on how essential manufacturing parameters like materials selection, thicknesses, deposition methods, and device lateral size can influence the quality of the RTN signal. In this paper, an exhaustive statistical analysis on the quality of the RTN signals produced by different MIM‐like memristors is reported, and straightforward guidelines for the fabrication of memristors with enhanced RTN performance are presented, which are: i) Ni and Ti electrodes show better RTN than Au electrodes, ii) the 50 μm × 50 μm devices show better RTN than the 5 μm × 5 μm ones, iii) TiO2 shows better RTN than HfO2 and Al2O3, iv) sputtered‐oxides show better RTN than ALD‐oxides, and v) 10 nm thick oxides show better RTN than 5 nm thick oxides. The RTN signals recorded have been used as entropy sources in high‐throughput TRNG circuits, which have passed the randomness tests of the National Institute of Standards and Technology. The work can serve as a useful guide for materials scientists and electronic engineers when fabricating MIM‐like memristors for RTN applications.

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Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations

Thamankar

Puglisi

Ranjan

et al. 2017

Journal of Applied Physics

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Charge transport and Random Telegraph Noise (RTN) are measured successfully at the nanoscale on a thin polycrystalline HfO2 film using room temperature Scanning Tunneling Microscopy (STM). STM is used to scan the surface of the sample with the aim of identifying grains and grain boundaries, which show different charge transport characteristics. The defects responsible for charge transport in grains and grain boundaries are identified as positively charged oxygen vacancies by matching the localized I-V curves measured at the nanoscale with the predictions of physics-based multi-scale simulations. The estimated defect densities at grains and grain boundaries agree with earlier reports in the literature. Furthermore, the current-time traces acquired by STM at fixed bias voltages on grains show characteristic RTN fluctuations. The high spatial resolution of the STM-based RTN measurement allows us to detect fluctuations related to individual defects that typically cannot be resolved by the conventional device-level probe station measurement. The same physical framework employed to reproduce the I-V conduction characteristics at the grains also successfully simulates the RTN detected at the nanoscale. We confirm that charge trapping at defects not directly involved in charge transport can induce significant current fluctuations through Coulombic interactions with other defects in the proximity that support charge transport

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Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

Abstract: Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications. Journal of applied physics, 111(2).

Cited by 4 publications

References 15 publications

Nanoscale characterization of resistive switching phenomena in HFO2-based stacks using transmission electron microscopy and atomistic simulation

Nanoscale characterization of resistive switching phenomena in HFO2-based stacks using transmission electron microscopy and atomistic simulation

Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study

Localized characterization of charge transport and random telegraph noise at the nanoscale in HfO2 films combining scanning tunneling microscopy and multi-scale simulations

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