Triple-Barrier Resonant-Tunnelling Diode THz Detectors with on-chip antenna

Arzi, Khaled; Clochiatti, Simone; Suzuki, Safumi; Rennings, Andreas; Erni, Daniel; Weimann, Nils; Asada, Masahiro; Prost, W.

doi:10.23919/gemic.2019.8698124

Cited by 10 publications

(6 citation statements)

References 13 publications

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“…When bias is applied and the resonant condition is met, the strong current increase leads to a strong non-linearity, with associated responsivity that can exceed the thermal limit [52]. TB RTDs can be used as high-sensitivity zero-bias detectors [155], with demonstrated voltage responsivities of up to 66 kV/W at 280 GHz [156]. This exceptional performance of TB RTDs has not yet been exploited in system applications.…”

Section: Rtd Thz Detectorsmentioning

confidence: 99%

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Cimbri

Wang

Al-Khalidi

et al. 2022

IEEE Trans. THz Sci. Technol.

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Resonant tunnelling diode (RTD) technology is emerging as one of the promising semiconductor-based solidstate technologies for terahertz (THz) wireless communications. This paper provides a review of the state-of-the-art, with a focus on the THz RTD oscillator, which is the key component of RTDbased THz transmitters and coherent receivers. A brief summary on the device principle of operation, technology, modelling, as well as an overview of oscillator design and implementation approaches for THz emitters, is provided. A new insight to device evaluation and to the reported oscillator performance levels is also given, together with brief remarks on RTD-based THz detectors. Thereafter, an overview of the reported wireless links which utilise an RTD in either transmission or reception, or in both roles, is given. Highlight results include the record single-channel wireless data rate of 56 Gb/s employing an all RTD-based transceiver, which demonstrates the potential of the technology for future short-range communications. The paper concludes with a discussion of the current technical challenges and possible strategies for future progress.

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Section: Rtd Thz Detectorsmentioning

confidence: 99%

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Cimbri

Wang

Al-Khalidi

et al. 2022

IEEE Trans. THz Sci. Technol.

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“…This allows for a high responsivity (i.e., ratio of the electrical output per optical input), exceeding the thermal limit. Recently, an impressive voltage responsivity of 6.6 × 10 4 V/W at 260 GHz and ambient temperature has been reported for a detector fabricated in the InGaAlAs material system [128]. Although the noise equivalent power (NEP) (i.e., minimum optical power required an output signal-to-noise ratio equal to 1 in one hertz bandwidth; details can be found, for instance, in Ref.…”

Section: Resonant Tunneling Diodesmentioning

confidence: 99%

Roadmap of Terahertz Imaging 2021

Valušis

Lisauskas

Yuan

et al. 2021

Sensors

191

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In this roadmap article, we have focused on the most recent advances in terahertz (THz) imaging with particular attention paid to the optimization and miniaturization of the THz imaging systems. Such systems entail enhanced functionality, reduced power consumption, and increased convenience, thus being geared toward the implementation of THz imaging systems in real operational conditions. The article will touch upon the advanced solid-state-based THz imaging systems, including room temperature THz sensors and arrays, as well as their on-chip integration with diffractive THz optical components. We will cover the current-state of compact room temperature THz emission sources, both optolectronic and electrically driven; particular emphasis is attributed to the beam-forming role in THz imaging, THz holography and spatial filtering, THz nano-imaging, and computational imaging. A number of advanced THz techniques, such as light-field THz imaging, homodyne spectroscopy, and phase sensitive spectrometry, THz modulated continuous wave imaging, room temperature THz frequency combs, and passive THz imaging, as well as the use of artificial intelligence in THz data processing and optics development, will be reviewed. This roadmap presents a structured snapshot of current advances in THz imaging as of 2021 and provides an opinion on contemporary scientific and technological challenges in this field, as well as extrapolations of possible further evolution in THz imaging.

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“…This is true at low frequencies but at f > 200 GHz differences appear, proving nonlinearity. The frequency range f > 200 GHz is recently being explored for real RTD-based THz sources and detectors [2][3][4]. The physical and unavoidable reason of this small-signal nonlinearity at f > 200 GHz is explained by the function G f (t i ) in Eq.…”

Section: Small-signal Thz Nonlinearity In Frequencymentioning

confidence: 99%

“…Beyond such limit, the output signal is not able to exactly follow the input signal, this produces nonlinearities that can be an advantage (rather than a drawback) for many applications like frequency multipliers, rectifiers, oscillators, and in general any signal modulator. Indeed, there are already prototypes of resonant tunneling diodes (RTD) as THz devices working at output frequencies close [1][2][3][4] or even beyond [5,6] the mentioned transit time limit.…”

Section: Introductionmentioning

confidence: 99%

There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit

Villani,

Clochiatti,

Prost

et al. 2021

Preprint

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The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel time-dependent displacement current coefficient valid for frequencies above this limit. Our model captures in a simple way the displacement current component of the total current, which at frequencies larger than the inverse of the electron transit time can be more relevant than the particle component. The proposed model is applied to compute the response of a resonant tunneling diode from 10 GHz up to 5 THz. We show that tunneling electron devices are intrinsically nonlinear at such high frequencies, even under small-signal conditions, due to memory effects related to the displacement current. We show that these intrinsic nonlinearities (anharmonicities) represent an advantage, rather than a drawback, as they open the path for tunneling devices in many THz applications, and avoid further device downscaling.

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Triple-Barrier Resonant-Tunnelling Diode THz Detectors with on-chip antenna

Cited by 10 publications

References 13 publications

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Resonant Tunneling Diodes High-Speed Terahertz Wireless Communications - A Review

Roadmap of Terahertz Imaging 2021

There is Plenty of Room for THz Tunneling Electron Devices Beyond the Transit Time Limit

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