Triple-junction InGaP/GaAs/Ge solar cells integrated with polymethyl methacrylate subwavelength structure

Abstract

a b s t r a c tGaAs-based triple-junction tandem solar cells incorporating an antireflection coating (ARC) consisting of a subwavelength structure (SWS) and bilayer thin films are reported. A high aspect ratio SWS was realized on polymethyl methacrylate (PMMA) using a two-step etched silicon template and a stamping method. The fabricated PMMA SWS consisting of a two-dimensional array of nanoscale needles with a period of 300 nm and an aspect ratio exceeding 2.3 exhibited significantly improved optical performance. The average reflectance of the PMMA SWS was reduced from 7.1 to 4.4% as compared to that of the bare PMMA film, which resulted in an improvement of the transmittance from 90.7 to 92.9% in the wavelength range between 300 and 1700 nm. By integrating the PMMA SWS together with a TiO 2 /Al 2 O 3 bilayer AR coating onto the top of an InGaP/GaAs/Ge triple-junction solar cell, the surface reflection of the solar cell could be minimized. The integrated PMMA SWS on the bilayer thin film ARC enhanced the powerconversion efficiency (Á) of the triple-junction solar cell from 30.2 to 31.6% and from 37.8 to 40.8% under 1 and 157 sun condition, respectively.

Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method

“…where J n is the normal component of the current density vector (superscripts "-" and "+" mean the "left" and "right" of the boundary, correspondingly); ρresistivity, Ohm•cm. By solving the systems of equations (7), (8) and (10)- (14), one can find I w (y, z) and I c (y, z). The calculation result is shown in Fig.…”

“…Among the most effective PCs, there are tandem/cascade cells fabricated using III-V compounds and their solid solutions [12][13][14]. As a rule, the bottom stage of these cells is made using the GaAs/Ge heterostructure.…”

Femtosecond Laser Processing Technology for Anti-Reflection Surfaces of Hard Materials

“…There are kinds of ways to prepare anti-reflection surfaces, including the sol-gel method [ 7 ], electron beam etching [ 8 ], nano-imprinting [ 9 ], wet etching [ 10 ], dry etching [ 11 ], etc. The sol-gel method is generally employed to prepare porous anti-reflection films, but its preparation time is relatively long.…”

Cu(In,Ga)Se2 Solar Cells Integrated with Subwavelength Structured Cover Glass Fabricated by One-Step Self-Masked Etching

“…For this purpose, subwavelength structures (SWSs) and their broadband anti-reflective properties have attracted interest for photovoltaic applications [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. When the period of the SWS is smaller than the wavelength of the incident light, the light diffraction can be suppressed.…”