Tritium-powered betacells based on Al/sub x/Ga/sub 1-x/As

The conversion of energy of electrons produced by a radioactive β-source into electricity in a Si and SiC n p  junctions is modeled. The features of the generation function that describes the electron-hole pair production by an electron flux and the emergence of a "dead layer" are discussed. The collection efficiency Q that describes the rate of electron-hole pair production by incident beta particles, is calculated taking into account the presence of the dead layer. It is shown that in the case of high-grade Si n p  junctions, the collection efficiency of electron-hole pairs created by a high-energy electrons flux (such as, e.g., Pm-147 beta flux) is close or equal to unity in a wide range of electron energies. For SiC p -n junctions, Q is near unity only for electrons with relatively low energies of about 5 keV (produced, e.g., by a tritium source) and decreases rapidly with further increase of electron energy. The conditions, under which the influence of the dead layer on the collection efficiency is negligible, are determined. The open-circuit voltage is calculated for realistic values of the minority carriers' diffusion coefficients and lifetimes in Si and SiC n p  junctions, irradiated by a high-energy electrons flux. Our calculations allow to estimate the attainable efficiency of betavoltaic elements.

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“…Standard p-type base was used in Si. L p , cm τ p , s d p , s p 0 , cm 3 d, cm D, cm 2 /s r d B r , cm 3…”

Section: The Collection Efficiency Analysismentioning

confidence: 99%

Efficiency analysis of betavoltaic elements

Sachenko

Shkrebtii

Korkishko

et al. 2015

Solid-State Electronics

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“…Batteries based on direct energy conversion have an efficiency of about 1%. In this case, β-electrons generate electron-hole pairs in a semiconductor, which are separated by the electric field of a p-n-junction or a metal-semiconductor contact [4][5][6] .…”

Section: Introductionmentioning

confidence: 99%

“…This is a significant problem, which limits the use of beta batteries. An analysis of the scientific literature [1][2][3][4][5][6][7][8] shows that the structures with isotopes with shorter half-lives have an advantage. In this case, the number of decays per unit time (isotope activity) is larger and the current value proportional to the activity is higher.…”

Section: Introductionmentioning

confidence: 99%

EfficiencyBeta Batteries with Direct Energy Conversion

Bulyarskiy

Abanin

Lakalin

2018

CAN

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The properties of the beta batteries are compared, which are made on the basis of the different β-isotopes with beta decay. Tritium and Ni-63 make it possible to make β-sources of high activity, without harmful associated emissions, with low self-absorption, emitting high-energy β-electrons that penetrate deep into the semiconductor and generate a large number of electron-hole pairs. The efficiency of beta batteries needs to be analyzed based on the real energy distribution of β-electrons. It makes possible to obtain the real value of the energy absorbed inside the β-source, correctly estimate the amount of self-absorption of the β-electrons and part of the β-electrons there is a penetrate into the semiconductor, the number of electrons and holes that are generated in the semiconductor, and the magnitude of the idling voltage. Formulas for these quantities are calculated in this paper.

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“…Более высоким коэффициентом полезного действия обладают батареи, основанные на принципе прямого преобразо-вания энергии. В этом случае β-электроны генерируют в полупроводнике электронно-дырочные пары, которые разделяются электрическим полем p−n-перехода или контакта металл−полупроводник [4][5][6]. Первоначально β-батареи изготавливались с использованием Pm-147 и трития, наносимых на плоскую поверхность диодных структур из кремния [6].…”

Section: Introductionunclassified

Оптимизация параметров источников питания, возбуждаемых beta-излучением

Булярский¹,

Lakalin²,

Abanin³

et al. 2017

Физика И Техника Полупроводников

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Представлены результаты экспериментальных исследований и расчетов эффективности преобразования энергии источников β-излучения Ni-63 в электрическую с помощью кремниевых p−i−n-диодов. Все вычис-ления выполнены с учетом распределения β-электронов по энергиям. Получено выражение для напряжения холостого хода преобразователя с учетом распределения электронов высоких энергий в области простран-ственного заряда p−i−n-диода. Показаны пути оптимизации параметров преобразователя за счет совершен-ствования технологии изготовления диодов, оптимизации толщины активного слоя излучателя и i-области полупроводникового преобразователя. Вычислено распределение потерь на преобразование источника и приемника излучения, а также потерь при входе электронов высоких энергий в полупроводник. Эксперимен-тальные значения эффективности преобразования 0.4−0.7% хорошо согласуются с расчетными параметрами.

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Tritium-powered betacells based on Al/sub x/Ga/sub 1-x/As

Cited by 16 publications

References 1 publication

Efficiency analysis of betavoltaic elements

Efficiency analysis of betavoltaic elements

EfficiencyBeta Batteries with Direct Energy Conversion

Оптимизация параметров источников питания, возбуждаемых beta-излучением

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