2022
DOI: 10.1016/j.apsusc.2022.153399
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Tunability of near infrared opto-synaptic properties of thin MoO3 films fabricated by atomic layer deposition

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Cited by 15 publications
(15 citation statements)
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“…Thin MoO 3 films have a high work function (∼5.5 eV), enabling efficient ion migration with thermal stability and a wide band gap (∼3.0–3.8 eV), providing good electrical insulation and stable RS behaviour [17]. In addition, atomic layer deposition (ALD) fabrication of thin MoO 3 films requires only 250°C [18]. To ensure effective charge carrier movement between electrodes and the active layer, the Nickel (Ni) metal electrode with a relatively low work function (∼5 eV) and high conductivity is chosen [17].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Thin MoO 3 films have a high work function (∼5.5 eV), enabling efficient ion migration with thermal stability and a wide band gap (∼3.0–3.8 eV), providing good electrical insulation and stable RS behaviour [17]. In addition, atomic layer deposition (ALD) fabrication of thin MoO 3 films requires only 250°C [18]. To ensure effective charge carrier movement between electrodes and the active layer, the Nickel (Ni) metal electrode with a relatively low work function (∼5 eV) and high conductivity is chosen [17].…”
Section: Introductionmentioning
confidence: 99%
“…[17]. In addition, atomic layer deposition (ALD) fabrication of thin MoO 3 films requires only 250°C [18]. To ensure effective charge carrier movement between electrodes and the active layer, the Nickel (Ni) metal electrode with a relatively low work function (∼5 eV) and high conductivity is chosen [17].…”
mentioning
confidence: 99%
“…It has provided inspiration for the preparation of wafer-scale ultra-thin MoO 3 films. 25 Li et al grew a large-scale 2D single crystal α-MoO 3 through controlling the quartz tube diameter; 21 the controllable synthesis of large-scale single crystal α-MoO 3 still faces challenges owing to the insufficient understanding of the α-MoO 3 nanosheet growth mechanism.…”
Section: Introductionmentioning
confidence: 99%
“…These factors are a significant challenge in conventional CMOS systems mainly because of the physical separation of the functional components, including sensory, computing, and memory units. [ 1–6 ] Driven by the human vision architecture, optic neuromorphic devices like photonic memristors, [ 7–18 ] have been developed for use as neuromorphic vision sensors, and they have shown great promise in combining optic sensing, memory, and processing functions in the same device. [ 4,17,19–21 ] Therefore, preprocessing and computing of the images in vision sensors can be efficiently realized at the edge rather than in cloud sever systems.…”
Section: Introductionmentioning
confidence: 99%
“…DOI: 10.1002/adma.202204844 vision architecture, optic neuromorphic devices like photonic memristors, [7][8][9][10][11][12][13][14][15][16][17][18] have been developed for use as neuromorphic vision sensors, and they have shown great promise in combining optic sensing, memory, and processing functions in the same device. [4,17,[19][20][21] Therefore, preprocessing and computing of the images in vision sensors can be efficiently realized at the edge rather than in cloud sever systems.…”
mentioning
confidence: 99%