Tunable dwell time in gated silicene nanostructures

Zhu, B.S.; Wang, Yu; Lou, Yiyi

doi:10.1016/j.physleta.2015.11.001

Cited by 11 publications

(6 citation statements)

References 26 publications

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“…In order to study effects of interlayer bias on energy gap of bilayer phosphorene and analyze the agility of charge carriers through potential barrier, it is essential to consider equations (17) and (18) in effective mass approximation as (A.5) So, in non-zero biasing, energy gap of bilayer phosphorene is given as following…”

Section: A2 Effective Mass Approximation For Dispersion Relations In ...mentioning

confidence: 99%

“…Also, we have probed in our previous paper, the spin dependent transport, tunnelling time characteristic and spin conductance in a ferromagnetic phosphorene monolayer lattice [9]. Furthermore, similar calculations are performed on the mechanism of tunnelling and specially dwell time parameter in 2D materials like single layer graphene [10][11][12][13][14], bilayer graphene [15,16] and silicene [17]. Beyond the quantum mechanics interest of tunnelling time, its importance comes from the need to understand the tunnelling dynamics in miniaturizing tunnelling high-speed devices owing to the fact that time is one of the key parameters for final performance evaluation of different types of nano-electronic devices.…”

Section: Introductionmentioning

confidence: 96%

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Transport characteristics and dwell time in a bilayer phosphorene barrier

Kh¹,

Faizabadi²

2018

J. Phys.: Condens. Matter

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In this paper, transport properties, dwell time and electron conductance were theoretically investigated through a rectangular electrostatic potential barrier in bilayer phosphorene and compared the results with monolayer phosphorene and graphene. It has been shown that in bilayer phosphorene, in the presence of an interlayer induced bias, a four-band approximation describes transport process in the system. The results show that interlayer bias parameter drastically affect transport properties. These effects include: (1) appearance of eight transmission and reflection coefficients from a band within the same band and between the two bands; (2) appearance of the anti-Klein tunnelling phenomenon and tuning the bias of system in such a way which is observed in specified biases and removed in other biases; (3) tuning conductance of the system. Results of dwell time in bilayer phosphorene show that this parameter in terms of barrier thickness does not have a strictly ascending behaviour and in limited range of incident energies (incident angles), the dwell time in the barrier reduces significantly which can be exploited in designing switching devices in nano-electronics. We found that increasing the interlayer bias decreases the intrinsic gap of the bilayer phosphorene which enables us to control the electron transmission rate in the system. In addition, our findings also demonstrate that by tuning the interlayer bias, a large electrical conductance can be achieved which can be used in semiconductor technology. Our study could serve as a basis for investigations of the basic physics of tunnelling mechanisms and using bilayer phosphorene as a proper candidate in low dimensional semiconductor industry.

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Section: A2 Effective Mass Approximation For Dispersion Relations In ...mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 96%

Transport characteristics and dwell time in a bilayer phosphorene barrier

Kh¹,

Faizabadi²

2018

J. Phys.: Condens. Matter

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“…Hartman realized that at the energies less than barrier height, as the width of the barrier increases, the phase delay time (and the dwell time) approaches a constant value [19,20]. This phenomenon has been named the Hartman effect, and has been studied theoretically in materials such as grapheme [21][22][23] and silicene [14].…”

Section: Introductionmentioning

confidence: 99%

“…Recently, stateof-the-art, ultrafast laser technology has been used to measure tunneling time delay during the strong field ioniz ation of atoms [8][9][10][11][12]. Two-dimensional structures such as graphene and silicene, which have a linear dispersion relation, are of great importance in the study of tunneling times because, in these structures, the Klein paradox is observed in the vertical incident, which causes complete transmission through a potential barrier [13,14]. Nevertheless, the zero band gap of graphene restricts its use in semiconductors.…”

Section: Introductionmentioning

confidence: 99%

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Dwell time, Hartman effect and transport properties in a ferromagnetic phosphorene monolayer

Faizabadi

2018

J. Phys.: Condens. Matter

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In this paper, spin-dependent dwell time, spin Hartman effect and spin-dependent conductance were theoretically investigated through a rectangular barrier in the presence of an exchange field by depositing a ferromagnetic insulator on the phosphorene layer in the barrier region. The existence of the spin Hartman effect was shown for all energies (energies lower than barrier height) and all incident angles in phosphorene. We also compared our results of the dwell time in the phosphorene structure with similar research performed on graphene. We reported a significant difference between the tunneling time values of incident quasiparticles with spin-up and spin-down. We found that the barrier was almost transparent for incident quasiparticles with a wide range of incident angles and energies higher than the barrier height in phosphorene. We also found that the maximum spin-dependent transmission probability for energies higher than barrier height does not necessarily occur in the zero incident angle. In addition, we showed that the spin conductance for energies higher (lower) than barrier height fluctuates (decays) in terms of barrier thickness. We discovered that, in contrast to graphene, the Klein paradox does not occur in the normal incident in the phosphorene structure. Furthermore, the results demonstrated the achievement of good total conductance at certain thicknesses of the barrier for energies higher than the barrier height. This study could serve as a basis for investigations of the basic physics of tunneling mechanisms and also for using phosphorene as a spin polarizer in designing nanoelectronic devices.

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Spin-dependent tunneling time and Hartman effect in silicene

Sattari

Hamdipour

2018

Physica E: Low-dimensional Systems and Nanostructures

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Tunable dwell time in gated silicene nanostructures

Cited by 11 publications

References 26 publications

Transport characteristics and dwell time in a bilayer phosphorene barrier

Transport characteristics and dwell time in a bilayer phosphorene barrier

Dwell time, Hartman effect and transport properties in a ferromagnetic phosphorene monolayer

Spin-dependent tunneling time and Hartman effect in silicene

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