We have theoretically studied ballistic electron transport in silicene under the manipulation of a pair of ferromagnetic gate. Transport properties like transmission and conductance have been calculated by the standard transfer matrix method for parallel and antiparallel magnetization configurations. It is demonstrated here that, due to the stray field-induced wave-vector filtering effect, remarkable difference in configuration-dependent transport gives rise to a giant tunneling magnetoresistance. In combination with the peculiar buckled structure of silicene and its electric tunable energy gap, the receiving magnetoresistance can be efficiently modulated by the externally-tunable stray field, electrostatic potential, and staggered sublattice potential, providing some flexible strategies to construct silicene-based nanoelectronic device.

a b s t r a c tBased on the developed analytical absorption model for 0.53 eV GaInAsSb alloy and the suggested material parameters, evaluating active layer controlled thermal conversion has been systematically done for both p-on-n and n-on-p configuration in its normal and inverted construction. A universal, spectruminsensitive optimal doping, N a(d) ¼ 3 Â 10 17 cm À3 , is observed in diode light-doped layer for all concerned configurations. By improving the doping in the light-doped layer, thickness compensation between emitter and base has been observed for normal structures and, for each considered structure, suboptimal structures can be employed by consuming less material to achieve comparable output as that for optimal one. Comparing to GaSb diode, 2e3 fold efficiency enhancement can be expected for low-temperature spectrum illumination, making the concerned device an efficient candidate for low-temperature TPV applications.

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