Tunable electronic and optical properties of two-dimensional ZnSe/AlAs van der Waals heterostructure

Yao, Fang; Zhou, Xiaolong; Xiong, Aihu

doi:10.1007/s00339-020-03674-4

Cited by 20 publications

(11 citation statements)

References 56 publications

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“…Accordingly, as there is no capacitive response, it is not meaningful to define stored energy within this regime. Similar phenomena were also observed at the layered van der Waals 2D heterostructures, i.e., h-BN/graphene/h-BN [48] and ZnSe/AlAs [49]. In order to clarify this effect, the application of an external electric field can be defined via the bias potential (i.e., E z = V b /d, where d is the distance between borophene plates as shown in Fig.…”

Section: Resultsmentioning

confidence: 54%

Design of nanoscale capacitors based on metallic borophene and insulating boron nitride layers

Moğulkoç

Güler

et al. 2021

Phys. Rev. Materials

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In alignment with the efforts on miniaturizing the components of electronic devices with enhanced performance, we investigate a dielectric nanocapacitor (DNC) based on metallic borophene electrodes separated with insulating hexagonal boron nitride (h-BN) monolayers (n = 1-5). The capacitive performance of the proposed DNC as a function of applied electric field ( E ) and thickness of the dielectric material is examined by using ab initio methods. The borophene plates and h-BN monolayers are commensurate and coupled only with van der Waals interaction, which constitutes an ideal configuration as a DNC. It is found that a single h-BN layer is not thick enough as a spacer to hinder quantum tunneling effects, and similar to the case with no insulating layer, borophene electrodes are shorted. Being effective from two h-BN layers, the charge separation on borophene plates is attained via E in the vertical direction. The capacitance of the DNC rapidly saturates at E 0.1 V/Å and reaches its maximum value of 0.77 μF/cm 2 for n = 2. The capacitance decreases with an increasing number of insulating layers as the distance between electrodes enlarges and shows a similar trend that is expected from the classical Helmholtz model. Our results suggest metallic and lightweight borophene and insulating h-BN monolayers as ideal constituents for the DNC design.

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Section: Resultsmentioning

confidence: 54%

Design of nanoscale capacitors based on metallic borophene and insulating boron nitride layers

Moğulkoç

Güler

et al. 2021

Phys. Rev. Materials

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“…The bandgap of the heterojunction can be effectively adjusted by applying an external electric field and strain, and the light absorption can also be improved. 28 Experimentally, L. Schrottke et al designed terahertz GaAs/AlAs quantum cascade lasers (QCLs). These terahertz QCLs can be used as local oscillators in airborne or satellite astronomical instruments, or in high-resolution absorption spectroscopy as radiation sources.…”

Section: Introductionmentioning

confidence: 99%

Tunable electronic and optical properties of a type-II AlAs/GaS heterojunction: first-principles calculations

Wang¹,

Xuan²,

Wang³

et al. 2023

CrystEngComm

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“…Van der Waals heterostructures between different 2D materials are found to be a promising approach to design devices with properties on demand [10]. For instance, theoretical calculations revealed interesting electronic and optical properties for PtS 2 /MoS 2 [11], ZnSe/AlAs [12], MoS 2 /GaN [13] 2D van der Waals heterostructures. Janus heterostructures are also predicted to be excellent candidates for heterogeneous photocatalysis owing to the possibility of tuning the morphology by creating different interfaces such as metal/semiconductor or semiconductor/semiconductor as well as the ease of introducing alloying or defects at the interfaces [14].…”

Section: Introductionmentioning

confidence: 99%

Emergence of metallic states at 2D MoSSe/GaAs Janus interface: a DFT study

Albar¹,

Aravindh²

2021

J. Phys.: Condens. Matter

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The stability and the electronic properties of two dimensional (2D) GaAs/MoSSe Janus interfaces were investigated using first principles density functional theory calculations. The effect of different atomic terminations on the interface stability, electronic properties and charge transfer at the interfaces were analyzed. Metallic states are formed at the stable MoSSe/GaAs interface owing to the synergistic effect of the presence of 2D occupied antibonding states in MoSSe and the band alignment at the interface. The non-symmetric structure of MoSSe Janus material turns out to play a key role to control the electronic properties of the stable Janus interface, which will be crucial deciding factor for practical applications.

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Tunable electronic and optical properties of two-dimensional ZnSe/AlAs van der Waals heterostructure

Cited by 20 publications

References 56 publications

Design of nanoscale capacitors based on metallic borophene and insulating boron nitride layers

Design of nanoscale capacitors based on metallic borophene and insulating boron nitride layers

Tunable electronic and optical properties of a type-II AlAs/GaS heterojunction: first-principles calculations

Emergence of metallic states at 2D MoSSe/GaAs Janus interface: a DFT study

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