“…To realize highly efficient optoelectronic devices, enormous efforts have been dedicated to fabricate doped ZnO semiconductor nanostructures with reproducible optical and electronic properties, including the controlled incorporation of n‐type and p‐type dopants, such as Al, Ga, N, Li, P, and so on . To date, the doped ZnO nano/microstructures are found to have more potential applications, such as microelectronics, chemical and biological sensor and diagnosis, light‐emitting displays, catalysis, optical storage, and so on . Of all elements, Ga is the most effective n‐type dopant in ZnO since the covalent bond length of GaO (1.92 Å) is nearly equal to that of ZnO (1.97 Å).…”