Tunable Electronic Transport Properties of Metal‐Cluster‐Decorated III–V Nanowire Transistors

Han, Ning; Wang, Fengyun; Hou, Jared J.; Yip, Sen Po; Lin, Hao; Xiu, Fei; Fang, Ming; Yang, Zaixing; Shi, Xiaoling; Dong, Guofa; Hung, Tai‐Feng; Ho, Johnny C.

doi:10.1002/adma.201301362

Cited by 73 publications

(74 citation statements)

References 37 publications

(50 reference statements)

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“…The typical workfunction ( W ) of graphene and intrinsically n-type InAs NW is ∼4.5 eV and ∼5.0 eV, respectively. [ 14,[51][52][53] Since the E F of graphene can be adjusted over a wide range by the top/bottom voltage due to its 2D nature. [ 7,14 ] Therefore the workfunction of graphene ( W gra ) in devices can be different with changing top/bottom voltages.…”

Section: Resultsmentioning

confidence: 99%

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High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

Miao

Guo

et al. 2014

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Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and I(light)/I(dark) ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW(-1) and I(light)/I(dark) ratio of 5 × 10(2), while the photoresponsivity and I(light)/I(dark) ratio of graphene infrared photodetectors are 0.1 mAW(-1) and 1, respectively. The Fermi level (E(F)) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications.

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Section: Resultsmentioning

confidence: 99%

“…Changing the device bottom-gate voltage leads to W gra > W InAs , and the SB height ( φ B ) can be expressed as φ B = W gra -χ InAs (fi xed, electron affi nity) and this is the blocking contact. [ 47,[51][52][53] When a positive V gs is applied:…”

Section: Resultsmentioning

confidence: 99%

High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

Miao

Guo

et al. 2014

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177

102

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“…I n the past decade, due to intriguing physical properties, one-dimensional (1D) semiconductor nanowires (NWs) have attracted attention as fundamental building blocks for next-generation electronics, optoelectronics, photovoltaics and so on [1][2][3][4][5][6][7][8] . Although significant progress has been made in the manipulation of NW nucleation and composition in both binary and ternary systems 9,10 , it is still challenging to control the morphology and size of NWs on length scales ranging from the atomic upwards, particularly for the technologically important III-Sb NWs.…”

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confidence: 99%

Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

et al. 2014

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Although various device structures based on GaSb nanowires have been realized, further performance enhancement suffers from uncontrolled radial growth during the nanowire synthesis, resulting in non-uniform and tapered nanowires with diameters larger than few tens of nanometres. Here we report the use of sulfur surfactant in chemical vapour deposition to achieve very thin and uniform GaSb nanowires with diameters down to 20 nm. In contrast to surfactant effects typically employed in the liquid phase and thin-film technologies, the sulfur atoms contribute to form stable S-Sb bonds on the as-grown nanowire surface, effectively stabilizing sidewalls and minimizing unintentional radial nanowire growth. When configured into transistors, these devices exhibit impressive electrical properties with the peak hole mobility of B200 cm 2 V À 1 s À 1 , better than any mobility value reported for a GaSb nanowire device to date. These factors indicate the effectiveness of this surfactant-assisted growth for high-performance small-diameter GaSb nanowires.

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“…One can see clearly that both devices can be reversibly switched between high and low resistance states, with excellent reproducibility and stability. Notably, the dark current is slightly increased from 0.96 to 1.42 nA due to the charge transfer as a result of difference in work function [15,33]. What is more, the photocurrent for AuNPs@ZnTeNW is increased by sevenfold from 17.7 to 142 nA, yielding an increase of on/off ratio from 18.4 to 98.6.…”

Section: Resultsmentioning

confidence: 86%

Surface Plasmon-Enhanced Nano-photodetector for Green Light Detection

Luo

Zheng

et al. 2015

Plasmonics

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Light manipulation is vitally important for onedimensional semiconductor nanostructure-based photodetectors which have great potential in future optoelectronic circuits, imaging technique, and light-wave communication. In this paper, we reported a plasmonic gold nanoparticle (AuNP)-decorated nano-photodetector for green light sensing. It is found that the as-fabricated device exhibits obvious increase in light absorption in the range from 400 to 550 nm, after functionalization of plasmonic AuNPs. Further device performance analysis reveals that the photocurrent of the plasmonic photodetector was increased by more than sevenfold, compared with that without coating. What is more, both responsivity and detectivity are found to increase as well. According to theoretical simulation based on the finite element method (FEM), the observed enhancement in device performance can be attributed to the surface plasmoninduced direct electron injection from the metal nanoparticles to the semiconductor nanostructures.

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Tunable Electronic Transport Properties of Metal‐Cluster‐Decorated III–V Nanowire Transistors

Cited by 73 publications

References 37 publications

High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

High-Responsivity Graphene/InAs Nanowire Heterojunction Near-Infrared Photodetectors with Distinct Photocurrent On/Off Ratios

Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires

Surface Plasmon-Enhanced Nano-photodetector for Green Light Detection

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