Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth

Loitsch, Bernhard; Rudolph, Daniel; Morkötter, Stefanie; Döblinger, Markus; Grimaldi, Gianluca; Hanschke, Lukas; Matich, Sonja; Parzinger, Eric; Wurstbauer, Ursula; Abstreiter, G.; Finley, Jonathan J.; Koblmüller, Gregor

doi:10.1002/adma.201404900

Cited by 57 publications

(98 citation statements)

References 45 publications

(73 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…No significant change in diameter of the wires is observed as a function of the annealing time. This confirms that evaporation occurs mostly from the top facet and is negligible on the side facets, as opposed to what is observed in GaAs [37]. The droplets are located on the corner between two {1-10} facets and stay close to the tip of the nanowire as shown in the 3D schematic in figure 1(d).…”

Section: Resultssupporting

confidence: 66%

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

et al. 2016

View full text Add to dashboard Cite

The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets are formed in situ on InAs(Sb) stems. Their position is modified to promote growth in the 〈11-2〉 or equivalent directions. We also show that indium droplets can be used for the fabrication of InSb insertions in InAsSb nanowires. Our results demonstrate that indium droplets can initiate growth of InAs nanostructures as well as provide added flexibility to nanowire growth, enabling the formation of kinks and heterostructures, and offer a new approach in the growth of defect-free crystals.S Online supplementary data available from stacks.iop.org/NANO/28/054001/mmedia

show abstract

Section: Resultssupporting

confidence: 66%

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

et al. 2016

View full text Add to dashboard Cite

show abstract

“…1(b), with the radius R and thickness L varying within a parameter space enabled by state-ofthe-art fabrication, which includes the regime of quantum confinement in the radial direction. 9,10 One can see that the ground state has almost exclusive HH character except for very thin radii, R < 5 nm. In this region, the ground state rapidly switches from mainly F band (HH) to mainly λ band character, as shown in Fig.…”

Section: B Holesmentioning

confidence: 97%

“…In particular, we assess the validity of the usual assumption that the ground state has a well defined, single-band, HH character. [9][10][11] The eigenfunctions of Hamiltonian H 6B h are sixcomponent spinors of the form: Ψ 6B h = 6 i=1 f i (r)|u i , where f i (r) is the envelope function associated with the |u i Bloch function. The weight of an individual component is computed as |f i | 2 .…”

Section: B Holesmentioning

confidence: 99%

See 1 more Smart Citation

Electrons, holes, and excitons in GaAs polytype quantum dots

Climente

Segarra

Rajadell

et al. 2016

Journal of Applied Physics

View full text Add to dashboard Cite

Single and multi-band (Burt-Foreman) k ·p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence band mixing and exciton Coulomb interaction. Spontaneous polarization is found to be a dominating term. Together with the control of dot thickness [Vainorious et al. Nano Lett. 15, 2652] it enables wide exciton wavelength and lifetime tunability. Several new phenomena are predicted for small diameter dots [Loitsch et al. Adv. Mater. 27, 2195], including non-heavy hole ground state, strong hole spin admixture and a type-II to type-I exciton transition, which can be used to improve the absorption strength and reduce the radiative lifetime of GaAs polytypes.

show abstract

“…In particular, Vainorius et al [159] have reported the synthesis of GaAs polytype QDs with exact control on the dot thickness, while Loitsch et al [170] have grown samples of the same system with various nanowire diameters down to 7 nm. Together, these experimental works show that precise tailoring of the QD geometry and, thus, of the energy structure is possible, which represents the first step towards the development of real devices.…”

Section: Spontaneous Polarization In Gaas Polytype Qdsmentioning

confidence: 99%

Electronic structure of quantum dots: response to the environment and externally applied fields

Ortí¹

View full text Add to dashboard Cite

AgraïmentsLa present Tesi doctoralés el resultat final de quatre anys de treball i esforç en què he tingut la sort de comptar amb el suport de companys, familiars i amics que han compartit amb mi aquesta enriquidora experiència. Sens dubte, el treball que ací es mostra no haguera sigut possible sense la seua ajuda.En primer lloc, voldria agrair a Josep Planelles i Juan Ignacio Climente el haver-me oferit la possibilitat de realitzar aquest projecte de Tesi sota la seua supervisió. Durant tot el temps que he tingut el plaer de treballar amb ells han mostrat un gran interès i una dedicació plena en proporcionar-me la millor formació investigadora tenint sempre present el que seria millor per al meu futur. De la mateixa manera, el meu agraïmentés extensiu a la resta de membres del grup de Química Quàntica Fernando Rajadell, José Luis Movilla, Miquel Royo i Ana Ballester que d'una manera o altra han contribuït a la realització d'aquesta Tesi. En especial vull destacar a Ana B, amb qui vaig tindre la sort de compartir laboratori durant els primers anys de doctorat i que prompte es va convertir en una molt bona amiga. D'altra banda, voldria mostrar també la meua gratitud als amics que han estat al meu costat en el dia a dia durant aquests anys i que han compartit amb mi molts bons moments dintre i fora de la universitat. En concret vull destacar a Ana M, David, Erica, Neus, Paula i, com no, a chéritounet Loucou. A més, cal mencionar a tots els membres del Departament de Química Física i Analítica, especialment a Merche per la seva predisposició a ajudar-me amb tota la paperassa i els tràmits burocràtics. Done també les gràcies a Sergio E. Ulloa per donar-me l'oportunitat de realitzar una estada breu en el seu grup de recerca en la Universitat d'Ohio (Estats Units), així com a tots els membres del grup per la seua acollida.Finalment, voldria agrair de cor als meus pares el suport i la confiança incondicionals que m'han donat durant tota la meua vida. Perquè són els principals responsables de que haja arribat fins ací, els dedique aquesta Tesi.

show abstract

Tunable Quantum Confinement in Ultrathin, Optically Active Semiconductor Nanowires Via Reverse‐Reaction Growth

Cited by 57 publications

References 45 publications

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Electrons, holes, and excitons in GaAs polytype quantum dots

Electronic structure of quantum dots: response to the environment and externally applied fields

Contact Info

Product

Resources

About