2009
DOI: 10.1007/s00340-008-3361-3
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Tunable single-frequency operation of a diode-pumped vertical external-cavity laser at the cesium D2 line

Abstract: We report on a diode-pumped vertical external-cavity surface-emitting laser emitting around 852 nm for Cesium atomic clocks experiments. We have designed a 7quantum-well semiconductor structure optimized for low laser threshold. An output power of 330 mW was achieved for 1.1 W of incident pump power. Furthermore a compact setup was built for low-power single-frequency emission. We obtained an output power of 17 mW in a single longitudinal mode, exhibiting both broad (9 nm) and continuous (14 GHz) tunability ar… Show more

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Cited by 20 publications
(19 citation statements)
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“…The number of quantum wells at the different antinodes is chosen such as to produce uniform quantum well excitation from the pump power that decays exponentially from the wafer surface as it is absorbed in the semiconductor. Placing quantum wells at the laser field antinodes resonantly enhances gain in this resonant periodic gain structure, as described by the confinement factor C. Such resonant periodic gain arrangement effectively eliminates spatial hole burning of the laser gain medium and enables simple single-frequency operation of these lasers, both with [55,104] and sometimes without [119,120] intracavity spectral filtering. Resonant gain enhancement, however, narrows the otherwise broad spectral bandwidth available from the laser gain medium.…”
Section: Semiconductor Gain Design For Vecselsmentioning
confidence: 99%
See 2 more Smart Citations
“…The number of quantum wells at the different antinodes is chosen such as to produce uniform quantum well excitation from the pump power that decays exponentially from the wafer surface as it is absorbed in the semiconductor. Placing quantum wells at the laser field antinodes resonantly enhances gain in this resonant periodic gain structure, as described by the confinement factor C. Such resonant periodic gain arrangement effectively eliminates spatial hole burning of the laser gain medium and enables simple single-frequency operation of these lasers, both with [55,104] and sometimes without [119,120] intracavity spectral filtering. Resonant gain enhancement, however, narrows the otherwise broad spectral bandwidth available from the laser gain medium.…”
Section: Semiconductor Gain Design For Vecselsmentioning
confidence: 99%
“…For single-frequency VECSEL operation, laser linewidth and noise measurements define the relevant laser characteristics [120,168]. Characterization of optical harmonic generation (Chapter 3) and mode-locked picosecond pulse generation (Chapter 6) in VECSELs is covered in detail in the other chapters in this book.…”
Section: Vecsel Laser Characterizationmentioning
confidence: 99%
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“…Since years, the VeCSEL concept is pointed out as a technology of choice for beyond-state-of-the-art laser light sources, 1, 2 demonstrating wavelength flexibility, [3][4][5][6][7][8] high power, [8][9][10][11] high spatial, temporal and polarization coherence, 7, 10 CW or fs ultra-short pulsed operation, [12][13][14][15][16] compactness and functionalities. [17][18][19] The targeted coherent state is typically a common circular low divergence fundamental gaussian TEM00 mode, linearly polarized state, single frequency state or modelocked comb.…”
Section: Introductionmentioning
confidence: 99%
“…These outstanding properties, and the fact that they can be designed to operate at almost any wavelength from the visible to the midinfrared via bandgap engineering and efficient intracavity conversion [3,4], make SDLs ideal laser sources for optical clocks and atom trapping [5]. Indeed, there are already a few instances of SDL development for atomic clock applications targeting clocks based on either caesium [6,7] or mercury [8,9]. Among optical clocks, those based on strontium are prime candidates for new optical standards for the definition of the second [10].…”
Section: Introductionmentioning
confidence: 99%