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We report on a diode-pumped vertical external-cavity surface-emitting laser emitting around 852 nm for Cesium atomic clocks experiments. We have designed a 7quantum-well semiconductor structure optimized for low laser threshold. An output power of 330 mW was achieved for 1.1 W of incident pump power. Furthermore a compact setup was built for low-power single-frequency emission. We obtained an output power of 17 mW in a single longitudinal mode, exhibiting both broad (9 nm) and continuous (14 GHz) tunability around the Cesium D 2 line. The laser frequency has been stabilized on an atomic transition with residual frequency fluctuations ~ 300 kHz. Through a beatnote experiment the-3 dB laser linewidth has been measured to < 500 kHz over 10 ms.

This work reports on an optically-pumped vertical external-cavity surfaceemitting laser (VECSEL) emitting around 852 nm for Cesium atomic clocks experiments. We describe in the following our first results on the design and the characterization of a VECSEL's semiconductor structure suitable for these applications. We optimized the parameters of the structure in order to have a low threshold and a high gain structure emitting around 852 nm. With a compact setup, we obtained a 5-mW single frequency emission exhibiting broad and fine tunability around the Cesium D 2 line.

We report on a high-power narrow-linewidth pulsed laser source emitting at a wavelength of 257 nm. The system is based on a master oscillator power amplifier architecture, with Yb-doped fiber preamplifiers, a Yb:YAG single crystal fiber power amplifier used to overcome the Brillouin limitation in glass fiber and nonlinear frequency conversion stages. This particularly versatile architecture allows the generation of Fourier transform-limited 15 ns pulses at 1030 nm with 22 W of average power and a diffraction-limited beam (M(2)<1.1). At a repetition rate of 30 kHz, 106 μJ UV pulses are generated corresponding to an average power of 3.2 W.