Tunable Spontaneous Emission From Layered Graphene/Dielectric Tunnel Junctions

Khorasani, Sina

doi:10.1109/jqe.2014.2308976

Cited by 10 publications

(10 citation statements)

References 44 publications

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“…Unprecedented attention has been brought in two-dimensional (2D) material over the past decades, leading to a variety of van de Waals heterostructures functionalized in both electrical [1][2][3][4][5][6][7] and optical [8][9][10] applications. Prototypical field-effect-transistor (FET) heterostructure devices based on graphene stacked with hexagonal boron nitride (hBN) 11,12 or transitional metal dichalcogenides 4 have been recently realized experimentally.…”

Section: Introductionmentioning

confidence: 99%

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Zhao

Wan

Hetmanuik

et al. 2016

IEEE Electron Device Lett.

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Two-dimensional (2D) crystals, such as graphene, hexagonal boron nitride and transitional metal dichalcogenides, have attracted tremendous amount of attention over the past decade due to their extraordinary thermal, electrical and optical properties, making them promising nano-materials for the next-generation electronic systems. A large number of heterostructures have been fabricated by stacking of various 2D materials to achieve different functionalities. In this work, we simulate the electron transport properties of a three-terminal multilayer heterostructure made from graphene nanoribbons vertically sandwiching a boron nitride tunneling barrier. To investigate the effects of the unavoidable misalignment in experiments, we introduce a tunable angular misorientation between 2D layers to the modeled system. Current-Voltage (I-V) characteristics of the device exhibit multiple NDR peaks originating from distinct mechanisms. A unique NDR mechanism arising from the lattice mismatch is captured and it depends on both the twisting angle and voltage bias. Analytical expressions for the positions of the resonant peaks observed in I-V characteristic are developed. To capture the slight degradation of PVR ratios observed in experiments when temperature increases from 2K to 300K, electron-photon scattering decoherence has been added to the simulation, indicating a good agreement with experiment works as well as a robust preservation of resonant tunneling feature.

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Section: Introductionmentioning

confidence: 99%

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Zhao

Wan

Hetmanuik

et al. 2016

IEEE Electron Device Lett.

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“…Also, hBN reduces the surface roughness of graphene without degrading its giant mobility 3 4 . The nano-scale devices based on graphene employing atomically thin hBN with novel electrical and optical properties have recently been reported 5 6 7 8 9 10 11 12 13 14 15 . An appearance of negative differential resistance (NDR) in such devices further interests the researchers as it could potentially impact the number of applications such as high-speed IC circuits, signal generators, data storage, and so on 16 .…”

mentioning

confidence: 99%

Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis

Zhao

Wan

et al. 2015

Sci Rep

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Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures consisting of a few atomic layers thick hBN film sandwiched between graphene nanoribbon electrodes. We show a gate-controllable vertical transistor exhibiting strong negative differential resistance (NDR) effect with multiple resonant peaks, which stay pronounced for various device dimensions. We find two distinct mechanisms that are responsible for NDR, depending on the gate and applied biases, in the same device. The origin of first mechanism is a Fabry-Pérot like interference and that of the second mechanism is an in-plane wave vector matching when the Dirac points of the electrodes align. The hBN layers can induce an asymmetry in the current-voltage characteristics which can be further modulated by an applied bias. We find that the electron-phonon scattering suppresses the first mechanism whereas the second mechanism remains relatively unaffected. We also show that the NDR features are tunable by varying device dimensions. The NDR feature with multiple resonant peaks, combined with ultrafast tunneling speed provides prospect for the graphene-hBN-graphene heterostructure in the high-performance electronics.

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“…Compared to the light sources based on tunneling injection and recombination of excitons 44 , the proposed structures can be scaled down to the nanometre dimensions due to high confine-ment of plasmons, and integrated in photonic and plasmonic waveguides. The proposed process of plasmon and photon generation is also different from interband recombination of electrons injected upon resonant tunneling considered in 45 . The difference between these processes is the same as the difference of quantum-cascade lasing with vertical and diagonal radiative transitions.…”

Section: Discussionmentioning

confidence: 94%

Plasmon-assisted resonant tunneling in graphene-based heterostructures

2017

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We develop a theory of electron tunneling accompanied by carrier-carrier scattering in graphene - insulator - graphene heterostructures. Due to the dynamic screening of Coulomb interaction, the scattering-aided tunneling is resonantly enhanced if the transferred energy and momentum correspond to those of surface plasmons. We reveal the possible experimental manifestations of such plasmon-assisted tunneling in current-voltage curves and plasmon emission spectra of graphene-based tunnel junctions. We find that inelastic current and plasmon emission rates have sharp peaks at voltages providing equal energies, momenta and group velocities of plasmons and interlayer single-particle excitations. The strength of this resonance, which we call plasmaronic resonance, is limited by interlayer twist and plasmon lifetime. The onset of plasmon-assisted tunneling can be also marked by a cusp in the junction $I(V)$-curve at low temperatures, and the threshold voltage for such tunneling weakly depends on carrier density and persists in the presence of interlayer twist

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Tunable Spontaneous Emission From Layered Graphene/Dielectric Tunnel Junctions

Cited by 10 publications

References 44 publications

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Negative Differential Resistance in Graphene Boron Nitride Heterostructure Controlled by Twist and Phonon-Scattering

Negative Differential Resistance in Boron Nitride Graphene Heterostructures: Physical Mechanisms and Size Scaling Analysis

Plasmon-assisted resonant tunneling in graphene-based heterostructures

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