Tunable transport property of oxygen ion in metal oxide thin film: Impact of electrolyte orientation on conductivity

Arunkumar, P.; Ramaseshan, R.; Dash, S.; Babu, K. Suresh

doi:10.1038/s41598-017-03705-w

Cited by 11 publications

(5 citation statements)

References 72 publications

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“…Figure 6A illustrates the X-ray diffraction patterns of pure, Eu-doped, and Eudoped (Glymo) Lu2SiO5 films calcined at 1100 °C. The broad signal from ≈ 10-30° is ascribed to the amorphous structure of quartz substrates [22][23][24]. Characteristic peaks of the B-type Lu2SiO5 were identified according to the standard diffraction data (ICSD #279584) for the LS1 and LS2 samples.…”

Section: Resultsmentioning

confidence: 99%

“…According to the reaction mechanism proposed for the formation of the precursor solution (Figure 5), the addition of Glymo favors the growth of the 3D network that will form the gel, obtaining a larger crystallite size compared with systems that do not contain Glymo. Figure 6A illustrates the X-ray diffraction patterns of pure, Eu-doped, and Eudoped (Glymo) Lu 2 SiO 5 films calcined at 1100 • C. The broad signal from ≈ 10-30 • is ascribed to the amorphous structure of quartz substrates [22][23][24]. Characteristic peaks of the B-type Lu 2 SiO 5 were identified according to the standard diffraction data (ICSD #279584) for the LS1 and LS2 samples.…”

Section: Resultsmentioning

confidence: 99%

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Effect of Glymo on the Morphological and Optical Properties of Eu3+-Doped Lu2SiO5 Films

Cancino-Moreno,

López-Marure,

Luna-Domínguez

et al. 2023

Coatings

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Eu3+-(5% mol)-doped Lu2SiO5 optical quality films were prepared using the sol–gel method and dip-coating technique from lutetium and europium salts as the lanthanide precursors and tetraethyl orthosilicate (TEOS) as the silicon source. To increase the thickness of the films, 3-Glycidyloxypropyl trimethoxysilane (Glymo) was added as the rheological agent during sol formation. Structural, morphological, and luminescent properties were investigated for Lu2SiO5, Eu3+:Lu2SiO5, and Eu3+:Lu2SiO5/Glymo in order to obtain high quality in luminescent films. X-ray diffraction (XRD) results show that the incorporation of the Eu3+ ions do not affect the A-Type and B-Type monoclinic crystalline phase typical of Lu2SiO5, even after five dipping cycles on quartz substrates and a final annealing process at 1100 °C. The morphology and topography of the films were studied by SEM and AFM. These techniques revealed films without surfactant that were uniform with low rugosity while the film with surfactant presented porous hills and valleys with uneven high values of roughness. The photoluminescence spectrum of Eu3+:Lu2SiO5 films showed 2 broad emission peaks centered at 589 nm and 612 nm. The presence of Glymo in the system promoted the formation of residual Lu2Si2O7 compounds with the highest lifetime values compared with films without surfactant. The results of the films are promising for luminescent applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Effect of Glymo on the Morphological and Optical Properties of Eu3+-Doped Lu2SiO5 Films

Cancino-Moreno,

López-Marure,

Luna-Domínguez

et al. 2023

Coatings

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“…Fuel cells can directly convert chemical energy into electrical energy more efficiently than internal‐combustion engines and have therefore attracted considerable attention as environmentally friendly power‐generation devices . Among the various types of fuel cells, solid oxide fuel cells (SOFCs) show the highest energy‐conversion efficiency and therefore emit less CO 2 than conventional combustion engines . However, the operation temperature of the currently available SOFC systems is so high (700–1000 °C) that starting and shutting them down is time‐consuming, and the component parts deteriorate readily.…”

Section: Introductionmentioning

confidence: 99%

“…However, the operation temperature of the currently available SOFC systems is so high (700–1000 °C) that starting and shutting them down is time‐consuming, and the component parts deteriorate readily. Therefore, a considerable amount of research on lowering the operation temperature of SOFCs has been conducted ,…”

Section: Introductionmentioning

confidence: 99%

Rh/Ce_0.25Zr_0.75O₂ Catalyst for Steam Reforming of Propane at Low Temperature

2019

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Solid oxide fuel cells (SOFCs) show high energy-conversion efficiency and thus emit less CO 2 than conventional combustion engines. Although SOFCs can directly convert hydrocarbons such as liquefied petroleum gas, these fuels readily induce coking on the electrodes of fuel cell stacks. To avoid coking, hydrocarbons can be subjected to a preliminary endothermic steam-reforming step at a relatively low temperature using waste heat from the stack. Herein, we report that a Rh/ Ce 0.25 Zr 0.75 O 2 catalyst exhibited higher propane-steam-reforming activity than other Rh/Ce 1À x Zr x O 2 catalysts and Rh/γ-Al 2 O 3 . Catalyst characterization revealed that Rh/Ce 0.25 Zr 0.75 O 2 had excellent redox property and high H 2 O-adsorption activity, which contributed to the activation of steam and thus enhanced the propane-steam-reforming activity of this catalyst. Results and DiscussionThe temperature dependences of the catalytic activities of Rh/ Ce 1À x Zr x O 2 and Rh/γ-Al 2 O 3 are shown in Figure 1a. At 200°C, no propane consumption was observed over Rh/γ-Al 2 O 3 , and conversion was low over all the Rh/Ce 1À x Zr x O 2 catalysts. At 250°C, some of the propane was consumed, and the propaneconversion activities of the catalysts decreased in the order Rh/ Ce 0.25 Zr 0.75 O 2 > Rh/Ce 0.5 Zr 0.5 O 2 > Rh/Ce 0.75 Zr 0.25 O 2 > Rh/CeO 2 > Rh/ ZrO 2 > Rh/γ-Al 2 O 3 . At the target temperature for this study (300°C), Rh/Ce 0.25 Zr 0.75 O 2 showed the best activity: the propane conversion reached 55 %, which was 6 times that over Rh/γ-Al 2 O 3 . At 300°C, the catalyst activities for propane conversion decreased in the order Rh/Ce 0.25 Zr 0.75 O 2 > Rh/Ce 0.5 Zr 0.5 O 2 > Rh/ ZrO 2 > Rh/Ce 0.75 Zr 0.25 O 2 > Rh/CeO 2 (Figure 1b). At 350°C, propane conversion over Rh/Ce 0.25 Zr 0.75 O 2 and Rh/ZrO 2 reached 100 %, and the activities of the other catalysts decreased in the [a] L.

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“…[39][40][41] The impact of microstructures, namely different grain morphologies, on the electrical properties in CeO 2 was studied for applications in the solid oxide fuel cells and catalysis. [42,43] Features including easy generation of oxygen vacancies, high oxygen mobility, together with the rich background information all make CeO 2 suitable for the study on how different grain morphologies would impact the RS in valence change memory. The current-voltage (I-V) characteristics of the three structures were explored to couple with the different grain boundary structures.…”

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confidence: 99%

Engineering of Grain Boundaries in CeO₂ Enabling Tailorable Resistive Switching Properties

Dou

Hellenbrand

Xiao

et al. 2023

Adv Elect Materials

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With their recent advances in memory and neuromorphic computing applications, resistive random-access memory (RRAM) emerges as one of the most promising electronic devices to change computational data management. The neuromorphic computing enabled by RRAMs provides viable solution to overcoming the limitations of the von-Neumann bottleneck for next-generation memory and computing applications. [1] As one type of RRAM, valence change memory made of oxides has numerous merits including large ON/OFF ratio, excellent endurance/retention, high switching speed, and simple fabrication. [2][3][4] Resistive switching (RS) in valence change memory is often realized by the change of electronic states of cations related to oxygen vacancies. Over the years, RS has been widely reported in many simple binary oxides (TiO 2 , [1,[5][6][7] HfO 2 , [8][9][10] CeO 2 , [11][12][13] and SiO 2 , [14,15] ) and ternary oxides Defect engineering in valence change memories aimed at tuning the concentration and transport of oxygen vacancies are studied extensively, however mostly focusing on contribution from individual extended defects such as single dislocations and grain boundaries. In this work, the impact of engineering large numbers of grain boundaries on resistive switching mechanisms and performances is investigated. Three different grain morphologies, that is, "random network," "columnar scaffold," and "island-like," are realized in CeO 2 thin films. The devices with the three grain morphologies demonstrate vastly different resistive switching behaviors. The best overall resistive switching performance is shown in the devices with "columnar scaffold" morphology, where the vertical grain boundaries extending through the film facilitate the generation of oxygen vacancies as well as their migration under external bias. The observation of both interfacial and filamentary switching modes only in the devices with a "columnar scaffold" morphology further confirms the contribution from grain boundaries. In contrast, the "random network" or "island-like" structures result in excessive or insufficient oxygen vacancy concentration migration paths. The research provides design guidelines for grain boundary engineering of oxide-based resistive switching materials to tune the resistive switching performances for memory and neuromorphic computing applications.

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Tunable transport property of oxygen ion in metal oxide thin film: Impact of electrolyte orientation on conductivity

Cited by 11 publications

References 72 publications

Effect of Glymo on the Morphological and Optical Properties of Eu3+-Doped Lu2SiO5 Films

Effect of Glymo on the Morphological and Optical Properties of Eu3+-Doped Lu2SiO5 Films

Rh/Ce_0.25Zr_0.75O₂ Catalyst for Steam Reforming of Propane at Low Temperature

Engineering of Grain Boundaries in CeO₂ Enabling Tailorable Resistive Switching Properties

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Tunable transport property of oxygen ion in metal oxide thin film: Impact of electrolyte orientation on conductivity

Cited by 11 publications

References 72 publications

Effect of Glymo on the Morphological and Optical Properties of Eu3+-Doped Lu2SiO5 Films

Effect of Glymo on the Morphological and Optical Properties of Eu3+-Doped Lu2SiO5 Films

Rh/Ce0.25Zr0.75O2 Catalyst for Steam Reforming of Propane at Low Temperature

Engineering of Grain Boundaries in CeO2 Enabling Tailorable Resistive Switching Properties

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Rh/Ce_0.25Zr_0.75O₂ Catalyst for Steam Reforming of Propane at Low Temperature

Engineering of Grain Boundaries in CeO₂ Enabling Tailorable Resistive Switching Properties