Aluminum-doped ZnO ͑AZO͒ films were epitaxially grown on sapphire ͑0001͒ substrates using pulsed laser deposition. As-deposited AZO films had a low resistivity of 8.01ϫ 10 −4 ⍀ cm. However, after annealing at 450°C in air, the electrical resistivity of the AZO films increased to 1.97ϫ 10 −1 ⍀ cm because of a decrease in the carrier concentration. Subsequent annealing of the air-annealed AZO films in H 2 recovered the electrical conductivity of the AZO films. In addition, the conductivity change was reversible upon repeated air and H 2 annealing. A photoluminescence study showed that oxygen interstitial ͑O i Ј͒ is a critical material parameter allowing for the reversible control of the electrical conducting properties of AZO films.