Tungsten nitride films grown via pulsed laser deposition studied in situ by electron spectroscopies

Soto, G.; Cruz, W. de la; Castillón, F. F.; Dı́az, José A.; Machorro, R.; Farı́as, M.H.

doi:10.1016/s0169-4332(03)00343-x

Cited by 46 publications

(26 citation statements)

References 19 publications

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“…We assign this to size and/or polarization effects [27] that indirectly point to island formation at the beginning of the film growth. Despite the information from the literature regarding the observed WN x peak positions are not consistent; [16 -18] both stoichiometry WN x (x ∼ 1.3 in the thick film) and the peak positions of ∼33 eV for W4f 7/2 and of ∼397 eV for N1s [19] point rather to a film stoichiometry between WN and WN 2 than to the W 2 N phase mostly reported for standard sputtering deposition. [15,16,18] The reason for that can be the very low deposition rates used in our case, which may lead to a preferred incorporation of the excited nitrogen from the plasma.…”

Section: Wn X On Simentioning

confidence: 91%

“…Many investigations were done on the topic of sputter deposition of W-based thin films and their structural characterization (e.g. Refs [4,[14][15][16][17][18]), but only a few papers dealt with interface properties [19,20] in particular. Thus we now focus our interest on XPS studies of interface reactions that may occur during the growth of such films on Si substrates.…”

Section: Introductionmentioning

confidence: 99%

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Initial growth of W‐based films deposited on Si studied with ARXPS

Oswald

Rittrich

Zahn

2008

Surface & Interface Analysis

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W and WN films with thicknesses of less than one monolayer up to some nanometers were deposited by magnetron sputtering. The samples were transferred after deposition immediately into an analysis chamber without breaking the vacuum to avoid oxide formation and contamination. Analysis was done by means of XPS for elemental and bonding state characterization and angle-resolved XPS (ARXPS) for nondestructive depth profiling. Phase formation and morphology were studied during the first stages of layer growth. Influences of the residual gas atmosphere are discussed.

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Section: Wn X On Simentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Initial growth of W‐based films deposited on Si studied with ARXPS

Oswald

Rittrich

Zahn

2008

Surface & Interface Analysis

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“…Up to now several investigated deposition methods were applied to fabricate tungsten oxide films on different substrates. Among them pulsed laser deposition (PLD) is recognized as a successful deposition technique to fabricate qualify tungsten oxide thin films for different applications [2][3][4]. In the case of metal oxides, this technique is usually accompanied with oxygen to produce stoichiometric WO 3 films but, in low-pressure deposition, the composition of the films is expected to be WO x<3 and may also have a metallic nature [4].…”

Section: Introductionmentioning

confidence: 99%

“…Among them pulsed laser deposition (PLD) is recognized as a successful deposition technique to fabricate qualify tungsten oxide thin films for different applications [2][3][4]. In the case of metal oxides, this technique is usually accompanied with oxygen to produce stoichiometric WO 3 films but, in low-pressure deposition, the composition of the films is expected to be WO x<3 and may also have a metallic nature [4]. In the PLD method, ablation of a composite target in vacuum condition is a complex process and, to the best of our knowledge, sub-stoichiometric deposition by ablation of a stoichiometric WO 3 target has not been completely understood.…”

Section: Introductionmentioning

confidence: 99%

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Real-time measurement of oxidation dynamics of sub-stoichiometric tungsten oxide films by pulsed laser deposition

2008

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In this study WO x films were deposited by laser ablation of ultra-pure (5N) tungsten trioxide targets onto SiO 2 or silicon substrates at 250°C temperature, 100 mTorr oxygen partial pressure and 1 × 10 −5 Torr vacuum. Surface chemical states and compositions of the deposits were determined by X-ray photoelectron spectroscopy. The results showed that deposits in oxygen partial pressure contain W 6+ with x ∼ 3.1, while vacuum-deposited films have different W states with various percentage distributions as W 4+ > W 5+ > W 6+ > W 0 , and x ∼ 1. We used fast electrical resistance measurement as a probe to study the deposition process. Film resistance as a function of deposition time in vacuum revealed some microsecond fluctuations modulated on the time variation curve of electrical resistance. We attribute these data to surface absorption and desorption of oxygen during layer deposition. Finally, the effect of the laser beam on the target's structure, surface morphology and chemical state was studied. Our results revealed that in spite of structural variation by laser irradiation, the O/W ratio remained about 3.

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Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnN_x thin films

Garzón-Fontecha

Cruz

Quevedo

2017

Surface & Interface Analysis

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We present a study of electrical and optical properties of nitrogen-doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p-type thin films were a relative partial pressure between 7% and 11% (N 2 and/or O 2 ), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X-ray diffraction results showed that the asdeposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X-ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p-type carriers between 10 18 and 10 19 cm −3 , and a Hall mobility between 0.1 and 1.94 cm 2 V −1 s −1 . These thin films were used to fabricate p-type thin film transistors. the thin film crystalline phase, in contrast with larger ionic sizes which could modify this crystalline phase. The focus of this work is to synthesize and characterize p-type N-doped SnO thin films with tetragonal structure using the DC sputtering method. The resulting samples showed different electronic, electrical, and optical properties due to the nitrogen content, and they were used as transparent p-type semiconductors in the fabrication of TFTs. | EXPERIMENTAL DETAILSSnN x , SnO, and SnO x N y thin films were deposited on substrates of Corning 2948 glass (cleaned ultrasonically) by DC reactive magnetron sputtering using a tin target (purity of 99.99%). The deposition parameters used to grow the thin films were a working pressure of 1.8 mTorr, a plasma DC power of 30 W, and relative partial pressure of the reactive gas (RG pp ) between 6% and 17%. The relative partial pressure was calculated from the nitrogen (pN 2 ), oxygen (pO 2 ), and argon (pAr) partial pressures obtained from a residual gas analyzer and using the relation RG pp = (pN 2 + pO 2 )/(pAr + pN 2 + pO 2 ). The as-deposited thin films were oxidized by annealing in a tubular furnace at 250°C for 30 minutes under a continuous gas flow (90% of N 2 and 10% of O 2 ). Depending on the reactive gas, the thin films obtained after annealing were called SnO for oxygen (RG pp = O pp ), SnO:N for nitrogen (RG pp = N pp ), or SnN x O y for oxygen plus nitrogen (RG pp = N pp + O pp ). The crystalline structures of the samples were recorded by X-ray diffraction using a Rigaku Ultima III diffractometer operated at 45 kV and 40 mA with a Cu Kα = 1.5406 Å radiation source. The chemical states and presence of nitrogen in the films were determined by Xray photoelectron spectroscopy (XPS), using a VersaProbe II from PHI with a monochromatic Al Kα (1486.6 eV) radiation source. The charge effects in the XPS spectra were corrected using the value of the binding energy of carbon 1 second peak at 284.5 eV. The surface morphology of films was studied by an at...

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Tungsten nitride films grown via pulsed laser deposition studied in situ by electron spectroscopies

Cited by 46 publications

References 19 publications

Initial growth of W‐based films deposited on Si studied with ARXPS

Initial growth of W‐based films deposited on Si studied with ARXPS

Real-time measurement of oxidation dynamics of sub-stoichiometric tungsten oxide films by pulsed laser deposition

Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnN_x thin films

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Tungsten nitride films grown via pulsed laser deposition studied in situ by electron spectroscopies

Cited by 46 publications

References 19 publications

Initial growth of W‐based films deposited on Si studied with ARXPS

Initial growth of W‐based films deposited on Si studied with ARXPS

Real-time measurement of oxidation dynamics of sub-stoichiometric tungsten oxide films by pulsed laser deposition

Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

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Electrical, optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnN_x thin films