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Negative bias temperature instability (NBTI) of the HfSiON/TiN gate stack is investigated as a function of the dielectric thickness. It is shown that as the thickness of the HfSiON layer is reduced below 20 Å , the NBTI mechanism approaches the mechanism that induces H-reaction diffusion. Conversely, for thicker HfSiON dielectrics, a combination of H-reactiondiffusion and charge detrapping from the bulk HfSiON contribute to NBTI. MOS devives with plasma nitrided HfSiON (30 Å) with varying nitrogen (N) content as gate dielectric are studied with respect to NBTI and it is found that NBTI is dominated by electron detrapping from the bulk and the threshold voltage (V TH) shift reduces monotonically with increasing N content.

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Zinc Oxide (ZnO) Thin-Film Transistors (TFTs) using Aluminum (Al) and Aluminum-doped zinc Oxide (AZO) as Source-Drain (S-D) contacts are reported. The fabrication process was carried out using five photolithography steps with a maximum processing temperature of 100 ˚C, which makes the process compatible with flexible/transparent applications. The AZO and ZnO films were deposited using Pulsed Laser Deposition (PLD). Aluminum was deposited using ebeam. The devices showed mobilities >10 cm 2 /V-s, threshold voltage in the range of 7 V and On/Off current ratios >10 5 . The resistance analysis showed that AZO is a better contact with lower contact resistance as identified in the TFTs. The AZO and ZnO stacks characterized by UV-V shows an optical transmission >80 %.