Performances of the metal-to-metal contact radio frequency (RF) MEMS switches largely rely on the contacts. A novel contact employing the microspring structure is demonstrated in this paper. The microspring contact can achieve a stable contact at lower actuation voltage, alleviating mechanical wear on the contacts, and can effectively increase the fabrication tolerance. An in-line Pt–Au microspring contact switch was fabricated and characterized. To evaluate the improvement in performance, the results were compared with those of the Au–Au solid contact switch without a microspring design. The highest current handled by the Pt–Au microspring contact was 150 mA per contact, whereas only 20 mA was handled by the Au–Au solid contact. The insertion loss of the Pt–Au microspring contact switch was –0.2 dB at 20 GHz, which was comparable with that of the Au–Au solid contact switch. The isolation of the Pt–Au microspring contact switch was –22 dB at 20 GHz, and that of the Au–Au solid contact switch was –18 dB. With the Pt–Au microspring contact, the switch exceeds its power handling ability and reliability with comparable RF performances.